Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of self-supporting germanium film and germanium film

A germanium thin film, self-supporting technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of high cost of germanium thin film preparation process, achieve the effect of reducing production cost and simple process

Active Publication Date: 2019-06-21
SANMING UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the relatively high cost of the preparation process of germanium thin films, the current germanium integrated optoelectronic systems mainly process and prepare germanium-based integrated optoelectronic systems by depositing germanium thin films on the silicon substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of self-supporting germanium film and germanium film
  • Preparation method of self-supporting germanium film and germanium film
  • Preparation method of self-supporting germanium film and germanium film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is some embodiments of the present invention, but not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the implementation manners in the present invention, all other implement...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a self-supporting germanium film. The preparation method comprises the steps of providing a silicon substrate; performing electrochemical etching on thesilicon substrate to generate uniform and dense nanopores in the silicon substrate so as to obtain a nano-porous silicon substrate; depositing a layer of germanium film on the nano-porous silicon substrate; performing high-temperature annealing for a nano-porous silicon epitaxial germanium film, and connecting holes in a germanium-silicon heterojunction interface in series and in parallel; and stripping the germanium film from the nano-porous silicon substrate. According to the preparation method of the self-supporting germanium film, the preparation process is simple and feasible, and the cost of preparing the germanium film is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, in particular to a method for preparing a self-supporting germanium thin film and the germanium thin film. Background technique [0002] As we all know, germanium, as an infrared optical material, has the advantages of high infrared refractive index, wide infrared transmission range, small absorption coefficient, low dispersion rate, easy processing, flash and corrosion, etc., and is especially suitable for thermal imagers in military industry and major civilian applications. Materials for windows, lenses, prisms and filters of infrared radar and other infrared optical devices; high-purity germanium or germanium-lithium used in gamma-spectrometers for astronomy, nuclear reaction spectrometers and plasma physics X-ray instruments; Si- Ge10 and germanium single crystals doped with mercury, cadmium, copper and gallium are used in infrared detectors. The performance of GaAs / Ge solar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02
Inventor 崔积适
Owner SANMING UNIV