Semiconductor light-emitting device and manufacturing method thereof
A technology of light-emitting devices and manufacturing methods, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of increasing process complexity and reducing the light efficiency of LED units, and achieve the effect of simplifying the manufacturing process
Pending Publication Date: 2019-07-05
GUANGDONG INST OF SEMICON IND TECH
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Problems solved by technology
For the monolithic integration scheme, in order to realize the isolation between each LED light-emitting unit, it is necessary to separate each LED epitaxial structure by etching, cutting, etc., which greatly increases the complexity of the process.
At the same time, the etched or cut surface has more non-radiative recombination centers, and the light efficiency of the obtained LED unit is significantly reduced
Method used
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[0085] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.
[0086] It should be noted that like numerals and let...
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The invention provides a semiconductor light-emitting device and a manufacturing method thereof. The light-emitting units of the semiconductor light-emitting device are grown based on a nitride nucleation layer selection region, and adjacent light-emitting units are separated from each other. The method does not require an etching or cutting process to cut the light-emitting units, simplifies a manufacturing process, and suppresses the nonradiative recombination center formed by etching or cutting the surface of the device. Further, by using different connection modes of a P-type electrode layer and an N-type electrode layer, an AC light-emitting device or a high-voltage light-emitting device can be formed to obtain an AC LED or a high-voltage LED.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED) is a commonly used light-emitting device. A conventional LED is a low-voltage DC device. When using commercial power or other higher-voltage power sources to drive LEDs, complex drive circuits are required. To convert the voltage of the power supply to the low-voltage DC power supply required by the LED, this significantly increases the cost of the system. Many manufacturers have developed AC LED devices or high-voltage LED chips or modules to solve this problem. These AC LEDs can be directly driven by the mains. If high-voltage LEDs are used, the complexity of the driving circuit required to drive from the mains to the LED voltage can be significantly reduced, which greatly reduces the cost of LED use. [0003] Existing AC LEDs or high-volta...
Claims
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Login to View More IPC IPC(8): H01L27/15
CPCH01L27/153
Inventor 黎子兰李成果张树昕
Owner GUANGDONG INST OF SEMICON IND TECH