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A 3D Integrated Passive Filter Based on Coaxial TSV

A passive filter, three-dimensional integration technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of low interconnection density, low processing precision, not suitable, etc., to achieve easy three-dimensional integration, good frequency selection performance, Design flexible effects

Active Publication Date: 2020-08-11
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the improvement of integration and performance of modern communication systems, various electronic chips and functional circuit modules are developing towards miniaturization. Fully meet the development requirements of filters in RF / microwave integrated circuits
On the one hand, its processing accuracy is not high, the parasitic electromagnetic effect is serious, and the interconnection density is low, which is not suitable for the requirements of high-frequency radio frequency and microwave integrated circuits; on the other hand, capacitors, inductors, and filters based on LTCC and MCM technologies Passive devices such as passive devices occupy a large area, which seriously limits the improvement of system integration.

Method used

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  • A 3D Integrated Passive Filter Based on Coaxial TSV
  • A 3D Integrated Passive Filter Based on Coaxial TSV
  • A 3D Integrated Passive Filter Based on Coaxial TSV

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Embodiment 1

[0052] See figure 1 , figure 1 It is a perspective view of a three-dimensional integrated passive filter based on coaxial silicon vias provided by an embodiment of the present invention. The three-dimensional integrated passive filter includes a first spiral inductor layer 1 , a first flat capacitor layer 2 , a through-silicon via capacitor layer 3 , a second flat capacitor layer 4 and a second spiral inductor layer 5 stacked sequentially from top to bottom.

[0053] Specifically, the first spiral inductor layer 1 includes a top dielectric 11 and a first metal spiral structure 12 nested in the top dielectric 11 to form a first spiral inductor; the second spiral inductor layer 5 includes a bottom dielectric 51 and nested A second metal spiral structure 52 in the bottom dielectric 51 to form a second spiral inductor. The through-silicon via capacitor layer 3 includes a substrate 31 and a plurality of through-silicon via structures 6 penetrating the substrate 31, each through-s...

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Abstract

The invention relates to a three-dimensional integrated passive filter based on coaxial through silicon vias. The capacitor sequentially comprises a first spiral inductance layer, a first plate capacitor layer, a through-silicon-via capacitor layer, a second plate capacitor layer and a second spiral inductance layer from top to bottom, wherein the through-silicon-via capacitance layer comprises asubstrate and a plurality of through-silicon-via structures penetrating through the substrate, each through-silicon-via structure is connected with the first flat-plate capacitance layer and the second flat-plate capacitance layer, and a coupling capacitor is formed between the adjacent through-silicon-via structures. According to the passive filter, the inductors and the capacitors are sequentially stacked in a three-dimensional mode to form a trapezoidal network of the inductors and the capacitors, the three-dimensional integrated passive filter is formed, and the passive filter has the advantages of being small in size, flexible in design, easy to integrate in a three-dimensional mode, good in frequency selection performance and the like.

Description

technical field [0001] The invention belongs to the technical field of passive electronic devices, and in particular relates to a three-dimensional integrated passive filter based on coaxial through-silicon holes. Background technique [0002] With the improvement of integration and performance of modern communication systems, various electronic chips and functional circuit modules are developing towards miniaturization. Fully meet the development requirements of filters in RF / microwave integrated circuits. On the one hand, its processing accuracy is not high, the parasitic electromagnetic effect is serious, and the interconnection density is low, which is not suitable for the requirements of high-frequency radio frequency and microwave integrated circuits; on the other hand, capacitors, inductors, and filters based on LTCC and MCM technologies Passive devices such as passive devices occupy a large area, which seriously limits the improvement of system integration. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H1/00
CPCH03H1/00H03H2001/0085
Inventor 尹湘坤朱樟明杨银堂李跃进丁瑞雪
Owner XIDIAN UNIV
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