Secondary nonlinear active magnetic control memristor simulator

A non-linear and simulator technology, applied in the direction of instruments, special data processing applications, electrical digital data processing, etc., can solve the problems of incomplete negative values, unsustainable external energy supply, etc.

Pending Publication Date: 2019-07-12
CHENGDU NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a quadratic nonlinear active magnetron memristor simulator to solve the instantaneous The po

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  • Secondary nonlinear active magnetic control memristor simulator
  • Secondary nonlinear active magnetic control memristor simulator
  • Secondary nonlinear active magnetic control memristor simulator

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Embodiment Construction

[0018] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0019] Such as figure 1 As shown, a quadratic nonlinear active magnetron memristor simulator, including negative resistance equivalent circuit, integral operation circuit, multiplier M 1 and resistor R 2 , the integral operation circuit includes a current conveyor U 1 , resistance R 1 and capacitance C 1 , the current conveyor U 1 The y pin, the multiplier M 1 The input terminal of the m pin and the resistor R 2 One end of both is connected to port a; the current transmitter U 1 x pin with resistor R 1 Connected to one end of the resistor R 1 The other end of the ground; the current transmitter U 1 the z pin with a capacitor C 1 Connected to one end of the capacitor C 1 The other end of the ground; the c...

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Abstract

The invention discloses a secondary nonlinear active magnetic control memristor simulator. The circuit comprises a negative resistance equivalent circuit, an integral operation circuit, a multiplier M1 and a resistor R2; the integral operation circuit comprises a current transmitter U1, a resistor R1 and a capacitor C1, and the negative resistance equivalent circuit comprises an operational amplifier U2, a resistor R3, a resistor R4 and a resistor R5. The electrical characteristics of the ports a and b of the secondary nonlinear active magnetic control memristor simulator are equivalent to theport characteristics of a magnetic control memristor, the volt-ampere characteristic curve of the ports a and b of the secondary nonlinear active magnetic control memristor simulator can continuouslyprovide energy outwards in two four quadrants during working, and the secondary nonlinear active magnetic control memristor simulator can be widely applied to a memristor circuit (such as a Chua's memristor circuit) needing to provide energy outwards.

Description

technical field [0001] The patent of the invention relates to the field of new circuit element simulator construction, in particular to a quadratic nonlinear active magnetron memristor simulator. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, starting from the completeness of circuit theory, predicted that in addition to resistance, capacitance and inductance, there is a fourth basic circuit element that characterizes the relationship between charge and magnetic flux, and named it memory. Resistor (memristor). In 2008, HP Labs published research results in the journal Nature, announcing the physical realization of a two-terminal device with memristor characteristics. The breakthrough of Hewlett-Packard Labs has aroused widespread concern in academia and industry, setting off an upsurge of people's research on memristors. [0003] A memristor is a nonlinear resistor whose resistance value can change with the history ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/36G06F30/367
Inventor 余波吴显云
Owner CHENGDU NORMAL UNIV
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