Chemical Vapor Deposition Chamber

Abstract

The invention relates to a chemical vapor deposition cavity. The chemical vapor deposition cavity comprises a cavity body, a diffusion plate arranged on the upper portion in the cavity, a heating plate arranged on the lower portion in the cavity, and a gas source communicating with the cavity so as to convey process gas to the cavity; the diffusion plate is composed of multiple sub diffusion plates which are evenly distributed in an array manner, the heating plate is composed of multiple corresponding sub heating plates which are evenly distributed in an array manner, the cavity body is provided with multiple corresponding gas and radio frequency conveying positions so as to convey process gas and radio frequency at the corresponding position in the cavity body, and the center of the gas and radio frequency conveying position corresponds to the centers of the corresponding sub diffusion plates and the corresponding sub heating plates. Through the chemical vapor deposition cavity, filmforming uniformity is excellent, the process controllability and stability are improved, key parts of chemical vapor deposition are more convenient to replace and overhaul, after being partly damaged,the key parts of chemical vapor deposition can be replaced, whole scrapping is not needed, and operating cost is reduced.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition chamber. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, CVD for short) is a process technology in which reactant substances undergo chemical reactions under gaseous conditions to generate solid substances that are deposited on the surface of a heated solid substrate to obtain solid materials. The whole process can be realized by chemical vapor deposition device (referred to as CVD device). A CVD device generally includes a reaction chamber and a control device for controlling reaction conditions such as pressure and temperature inside the reaction chamber. [0003] Plasma-enhanced chemical vapor deposition (PECVD) is mainly used in the deposition of non-metallic thin films in industries such as liquid crystal TFT panel manufacturing, semiconductor chip manufacturing and solar cell manufacturing. ...

AI Technical Summary

Problems solved by technology

The film layer distribution prepared by using the existing chemical vapor deposition chamber is as follows: Figure 4 As shown, the color depth indicates the distribution of the film layer. As the panel manufacturing line is gradually upgraded from the original G2 generation to the G10.5 generation, it is difficult for the existing chemical vapor deposition chamber to control the uniformity of the film formation

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