high-side high-speed drive circuit of P-type VDMOS and drive method thereof

Abstract

The invention provides a high-side high-speed drive circuit of a P-type VDMOS (Vertical Double-Diffusion Metal Oxide Semiconductor). The internal circuits of the side high-speed driving circuit and the driving circuit chip are simple in design, the area is small, the standby current is very small, when the driving tube is started, the rising time is short, the slew rate is good, the grid voltage of the VDMOS transistor is flexible according to different circuit requirements, and different output voltages are obtained. The high-side high-speed drive circuit is suitable for various P-type VDMOSdevices, and the effects of reducing the area and reducing the cost are achieved. The gate voltage of the VDMOS transistor is 5V-12V and can be adjusted according to circuit requirements; the currentis effectively subjected to temperature compensation when the circuit is designed, a special high-voltage process and an additional Mask are not needed, the use process is safe and reliable, the costis saved, and the research and development period is greatly shortened.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a high-voltage VDMOS drive circuit. Background technique [0002] With the continuous development of science and technology in the new century, household appliances are continuously miniaturized and integrated, which also increases the demand for chips. At present, a large number of electronic products need to use driver chips to work, and the smaller the chip area requirements, the better, and the lower the cost, the better. At present, the technology used in the circuit design of most driver chips is CMOS technology, such as figure 1 As shown: the circuit converts the input VCC voltage into the internal working voltage of the VCC-5V circuit through the Reference circuit, and converts the VCC voltage into different working voltages that can be switched in the circuit through the Level Shift circuit, and further drives the Drive circuit to generate and drive the MOS transistor gate Pole...

AI Technical Summary

Problems solved by technology

This kind of circuit currently has some disadvantages: the internal circuit is relatively complex, the power tube is turned on for too long, and the MOS drive tube must use a high gate voltage process, which will cause the chip to occupy too much area and cause a large standby current of the chip. , an additional Mask is required during tape-out, which increases the design cost of the chip

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