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Core-shell quantum dot, preparation method thereof and quantum dot photoelectric device

A technology of core-shell quantum dots and quantum dots is applied in the fields of core-shell quantum dots and their preparation, and quantum dot optoelectronic devices. Good results

Active Publication Date: 2019-07-23
NANJING TECH CORP LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, the size of the synthesis of CdZnSeS alloy quantum dots reported in the literature is generally less than 8nm, and there are few studies on the synthesis of CdZnSeS alloy quantum dots with larger particle size (greater than 10nm) and their core-shell structure.

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  • Core-shell quantum dot, preparation method thereof and quantum dot photoelectric device
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  • Core-shell quantum dot, preparation method thereof and quantum dot photoelectric device

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[0025] The inventor found the following problems in the research process of the large-size quantum dot coating shell: First, when the existing method covers the shell, as the thickness of the shell increases, the fluorescence quantum production of the core-shell quantum dot takes the lead. After increasing, it decreases, so it is difficult to obtain core-shell quantum dots coated with a thick shell layer with high fluorescence quantum yield; the core-shell quantum dots obtained by coating a thick shell layer outside the large-sized quantum dots have a monodisperse size and morphology poor. In order to solve the above problems, the present invention provides a method for preparing core-shell quantum dots, comprising the following steps:

[0026] S1, preparing initial quantum dots in a solution;

[0027] S2, adding a trialkylphosphine oxide or a short-chain carboxylic acid to the solution including the initial quantum dots, and purifying the quantum dots from the solution after...

Embodiment 1

[0049] Synthesis of CdZnSeS / ZnS core-shell quantum dots:

[0050] (1) Take 1.25g of zinc acetate, 0.075g of cadmium acetate, 12g of oleic acid, and 22g of ODE in a 100mL three-necked flask. -S-TOP solution, react for 20 minutes to stop the reaction, and make the initial quantum dots——CdZnSeS alloy;

[0051] (2) inject 2mL octanoic acid solution in the solution of step (1) and process initial quantum dot, obtain the CdZnSeS alloy quantum dot that average particle size is 13nm, purify;

[0052] (3) Take 2.5g of zinc acetate, 15g of oleic acid, and 24g of ODE in a 100mL three-necked flask, add purified CdZnSeS alloy quantum dots, at 200°C, pass inert gas to exhaust for 30 minutes, raise the temperature to 300°C, Add 60 mL of S-ODE solution with a concentration of 0.2 mmol / mL dropwise at a rate of 17 mL / h.

Embodiment 2

[0054] Synthesis of CdZnSeS / ZnS core-shell quantum dots:

[0055] (1) Take 1.25g of zinc acetate, 0.075g of cadmium acetate, 12g of oleic acid, and 22g of ODE in a 100mL three-necked flask. -S-TOP solution, react for 20 minutes to stop the reaction, and make the initial quantum dots——CdZnSeS alloy;

[0056] (2) Inject 2mL trioctylphosphine oxide solution into the solution of step (1) to process the initial quantum dots, obtain the CdZnSeS alloy quantum dots with an average particle size of 13nm, and purify;

[0057] (3) Take 2.5g of zinc acetate, 15g of oleic acid, and 24g of ODE in a 100mL three-necked flask, add purified CdZnSeS alloy quantum dots, at 200°C, pass inert gas to exhaust for 30 minutes, raise the temperature to 300°C, Add 60 mL of S-ODE solution with a concentration of 0.2 mmol / mL dropwise at a rate of 17 mL / h.

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Abstract

The invention discloses a core-shell quantum dot, a preparation method thereof and a quantum dot photoelectric device. The preparation method of the core-shell quantum dot includes the following steps: S1, preparing an initial quantum point in a solution; S2, adding trialkyl phosphine oxide or a short-chain carboxylic acid to the solution containing the initial quantum point and purifying the quantum dot from the solution after a reaction; and S3, shell layer coating is carried out on the outside of the purified quantum dot to obtain the core-shell quantum dot. The core-shell quantum dot prepared by the method of the invention has the advantages of strong water-oxygen resistance, high quantum dot yield and narrow fluorescence half-peak width.

Description

technical field [0001] The invention relates to the technical field of quantum dot materials, in particular to a core-shell quantum dot, a preparation method thereof, and a quantum dot photoelectric device. Background technique [0002] In the past two decades, quantum dot synthesis chemistry has mainly focused on the monodisperse control of size and morphology and how to improve the fluorescence quantum yield. However, in order to make quantum dots a class of excellent luminescent and optoelectronic materials, it is not enough to achieve monodispersity of size and morphology and increase the quantum yield of fluorescence. The more important goal is to reduce the influence of the environment—especially water and oxygen—on the optical and electrical properties of quantum dots as much as possible, which will greatly promote the academic and applied research of quantum dots. [0003] The research results of CdSe / CdS core-shell quantum dots conducted by the research group of Mr...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00
CPCC09K11/02C09K11/883B82Y20/00B82Y30/00
Inventor 周健海邵蕾
Owner NANJING TECH CORP LTD
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