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Growth device and process capable of growing bubble-free crystal materials at high speed

A crystal material and growth device technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of crystal growth speed producing a large number of bubbles, increase of heat exchange contact area, slow crystal growth speed, etc., and achieve production efficiency Improvement, improvement of cooling life, and improvement of production efficiency

Active Publication Date: 2019-08-06
惠磊光电科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the defects in the prior art that the crystal growth rate is slow, and the crystal interface is small and unstable, and if the crystal growth rate is too fast, a large number of bubbles will be generated, the first purpose of the present invention is to provide a growth device that can grow a bubble-free crystal material at a high speed , by setting the heat exchange in the center of the annular crucible, the heat exchange contact area is significantly increased to solve the above technical problems, which obtains a large interface gradient and interface stability, and can grow bubble-free polycrystalline materials at a high speed

Method used

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  • Growth device and process capable of growing bubble-free crystal materials at high speed
  • Growth device and process capable of growing bubble-free crystal materials at high speed
  • Growth device and process capable of growing bubble-free crystal materials at high speed

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Effect test

Embodiment 1

[0032] Embodiment 1: as figure 1 As shown, a growth device capable of growing bubble-free crystal material at high speed, a rectangular frame-shaped support 1 and a furnace body 2 located on the support 1, the furnace body 2 is rectangular parallelepiped, and the bottom of the furnace body 2 is provided with a rectangular movable hole 3 , A cylindrical annular crucible 4 is arranged inside the furnace body 2 , and a matching cover 7 is arranged on the annular crucible 4 . The furnace body 2 is provided with a heating element 5 for heating the crucible 4, and an insulating layer 6 for heat preservation. The heating element 5 includes four silicon-molybdenum rods, and the four silicon-molybdenum rods run through the side wall of the furnace body 2 and They are respectively located on both sides of the annular crucible 4, and the material in the insulation layer 6 is asbestos. At the same time, a temperature measuring device 12 is arranged inside the furnace body 2, and the temp...

Embodiment 2

[0037]Embodiment 2: A growth process for high-speed growth of a bubble-free crystal material, specifically comprising the following steps:

[0038] Step 1, put magnesium fluoride powder into the cavity of the crucible, cover the lid, the heating element starts to generate heat, and heat the raw material until the temperature exceeds the melting point, and the raw material is completely melted. The heating rate of the raw material is 75°C / h, and the temperature is 50°C, high temperature clarification, constant power for 2 hours, the flow rate of helium in the heat exchange tube is maintained at the initial flow rate, and the initial flow rate is approximately 0.2L / min;

[0039] Step 2: Begin to gradually increase the flow rate of helium gas. The flow rate of helium gas gradually increases from the initial flow rate to the required flow rate for crystal growth within a certain period of time. The rate of increase in the flow rate of helium gas is 0.5 (L / min) / h. In 10 hours, the ...

Embodiment 3

[0041] Embodiment 3: A growth process for high-speed growth of a bubble-free crystal material, specifically comprising the following steps:

[0042] Step 1, put lithium fluoride powder into the cavity of the crucible, cover the lid, the heating element starts to generate heat, and heat the raw material until the temperature exceeds the melting point, and the raw material is completely melted. The heating rate of the raw material is 75°C / h, and the temperature is 200°C, high temperature clarification, constant power for 5 hours, the flow rate of helium in the heat exchange tube is maintained at the initial flow rate, and the initial flow rate is approximately 0.5L / min;

[0043] Step 2: Begin to gradually increase the flow rate of helium gas. The flow rate of helium gas gradually increases from the initial flow rate to the required flow rate for crystal growth within a certain period of time. The rate of increase in the flow rate of helium gas is 23 (L / min) / h. In 30 hours, the f...

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Abstract

The invention discloses a growth device and process capable of growing bubble-free crystal materials at high speed, relates to the technical field of production processes of vacuum coated crystal materials, and solves the defects of slow crystal growth speed, small and unstable crystal interface, generation of a large number of bubbles and the like once the crystal growth speed is too fast. The growth device comprises a support and a furnace body positioned on the support, wherein an annular crucible for containing raw materials is arranged in the furnace body, a cover body is arranged on theannular crucible, and a heating body and an insulating layer are arranged in the furnace body; a through hole is formed in the center of the annular crucible, a heat exchange tube is arranged in the through hole, a temperature measuring device is arranged on the furnace body, and a supporting plate abutting against the bottom of the annular crucible is arranged on the circumferential side of the heat exchange tube. The innovation of the growth device lies in that the crucible is annular, the middle of the crucible is empty, the crucible can accommodate the heat exchange tube, and crystal materials which are basically free of bubbles can be grown at high speed by increasing a cooling medium in the heat exchange tube to provide crystal driving force during crystal growth.

Description

technical field [0001] The invention relates to the technical field of production technology of vacuum coating crystal materials, more specifically, it relates to a growth device and technology capable of growing bubble-free crystal materials at high speed. Background technique [0002] Vacuum coating crystal materials, especially electronic-grade vacuum coating crystal materials, require high purity and few internal bubbles to ensure stable vacuum during the vacuum coating process, no gas leakage and no collapse, and good coating effect and coating efficiency. [0003] At present, vacuum coating crystal materials are mainly formed by rapid cooling after high-temperature vacuum melting. The position of the crucible does not change during crystal growth, and the growth can only be controlled by power / temperature. The temperature gradient in the thermal field distribution is very small, and the temperature is too high. Crystallization, when the temperature is slightly lower, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/12
CPCC30B11/003C30B28/06C30B29/12
Inventor 廖永建
Owner 惠磊光电科技(上海)有限公司