Vertical structure chip and manufacturing method
A vertical structure and manufacturing method technology, applied in the field of optoelectronics, can solve problems affecting external quantum efficiency and achieve the effect of ensuring stability
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Embodiment 1
[0045] refer to figure 1, the vertical structure chip provided by this embodiment includes a conductive substrate 1, a P-side metal layer 2, an epitaxial layer, a transparent conductive layer 6, and a metal electrode 7, wherein the epitaxial layer is fixed on one side of the conductive substrate 1 through the P-side metal layer 2 The epitaxial layer sequentially includes a P-type semiconductor 3, an active layer 4, and an N-type semiconductor 5 along a direction away from the conductive substrate 1, and the transparent conductive layer 6 and the metal electrode 7 are all fixed on the side of the N-type semiconductor 5 away from the conductive substrate 1, and The metal electrode 7 is electrically connected to the transparent conductive layer 6 and the N-type semiconductor 5 at the same time.
[0046] In this vertical structure chip, by setting the transparent conductive layer 6, the metal electrode 7 is only used to realize the electrical connection between the transparent con...
Embodiment 2
[0057] refer to figure 1 - Figure 8 , the present embodiment provides a method for fabricating a vertical structure chip, which is used to fabricate the vertical structure chip as described above, comprising the following steps:
[0058] S1: sequentially forming an unintentionally doped semiconductor 10, an N-type semiconductor 5, an active layer 4, and a P-type semiconductor 3 on the substrate 9;
[0059] S2: making a P-face metal layer 2 on the side of the P-type semiconductor 3 facing away from the substrate 9, and fixing a conductive substrate 1 on the side of the P-face metal layer 2 facing away from the substrate 9;
[0060] S3: removing the substrate 9 and the unintentionally doped semiconductor 10, exposing the N-type semiconductor 5;
[0061] S4: separating the N-type semiconductor 5, the active layer 4 and the P-type semiconductor 3 to form a plurality of chip units;
[0062] S5: making a transparent conductive layer 6 on the side of the N-type semiconductor 5 in...
Embodiment 3
[0070] refer to figure 1 - Figure 7 , the present embodiment provides another method for fabricating a vertical structure chip, which is used to fabricate the vertical structure chip as described above, including the following steps:
[0071] S1: sequentially forming an unintentionally doped semiconductor 10, an N-type semiconductor 5, an active layer 4, and a P-type semiconductor 3 on the substrate 9;
[0072] S2: making a P-face metal layer 2 on the side of the P-type semiconductor 3 facing away from the substrate 9, and fixing a conductive substrate 1 on the side of the P-face metal layer 2 facing away from the substrate 9;
[0073] S3: removing the substrate 9 and the unintentionally doped semiconductor 10, exposing the N-type semiconductor 5;
[0074] S4: separating the N-type semiconductor 5, the active layer 4 and the P-type semiconductor 3 to form a plurality of chip units;
[0075] S5: making metal electrodes 7 and metal pads 8 on the side of the N-type semiconduc...
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