Protective device of vacuum measuring tool of ion beam etching system

Abstract

The invention provides a protective device of a vacuum measuring tool of an ion beam etching system. The ion beam etching system comprises a reaction cavity and the vacuum measuring tool used for measuring the internal vacuum degree of the reaction cavity; a ventilation connector is arranged on the wall of the reaction cavity; and the vacuum measuring tool is connected to the ventilation connector. The protective device comprises a blocking plate arranged in the reaction cavity and used for shielding the ventilation connector; the blocking plate is close to the inner wall of the reaction cavity at the ventilation connector; and a projection surface, projected onto the blocking plate along the central axis of the ventilation connector, of the ventilation connector is located in a shieldingsurface range of the blocking plate. The protective device further comprises a push-pull mechanism for driving the blocking plate to be far away from or close to the ventilation connector. According to the protective device, metal particles and ion beams are effectively blocked through the blocking plate which closely shields the ventilation connector; the blocking plate is driven to be far away from or close to the ventilation connector through the push-pull mechanism, so that a gap between the blocking plate and the inner wall of the reaction cavity is prevented from being blocked by impurities, and the proper gap is kept under the condition that the ventilation requirement is met.

Description

technical field [0001] The invention belongs to the technical field of semiconductor etching, in particular to a protection device for a vacuum measuring tool of an ion beam etching system. Background technique [0002] In the manufacturing process of semiconductor devices, the etching process is the most frequently used and appeared among many processes. [0003] As the key structure of the chip shifts from planar to 3D structure (for example: FinFET structure in logic devices), advanced memory structures (for example: magnetic memory (MRAM) and resistive variable memory (ReRAM), these device structures require the accuracy of the etching process , repeatability and process quality requirements are getting higher and higher; at the same time, in the manufacturing process of MRAM devices, there are many special metal materials and metal compound materials that need to use the etching process; in addition, the etching process generated during the plasma etching process Most ...

AI Technical Summary

Problems solved by technology

The position of the vacuum measurement device is generally within the divergence angle of the ion beam, so the ion beam emission will enter the vacuum measurement device during the etching process, destroying the measurement circuit, resulting in damage to the vacuum gauge and other damages that cannot be used, increasing the frequency of replacement and cost consumption too high

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