High-sensitivity hydrogen sensor at room temperature and preparation method thereof

A sensor and hydrogen technology, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of inconvenient application, and achieve the effect of easy operation, convenient use and high sensitivity

Inactive Publication Date: 2019-08-23
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, gas sensors usually require complex spectrometers or color charts for comparison, which are not convenient for application

Method used

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  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof
  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof
  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof

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Embodiment 1

[0042] A high-sensitivity hydrogen sensor at room temperature comprises a substrate and a hydrogen sensitive layer in sequence, and the hydrogen sensitive layer is a palladium-doped tungsten trioxide thin film. Further, in this embodiment, the preferred substrate is a graphene / Si heterostructure Schottky junction composed of n-type silicon wafer and graphene. The thickness of the hydrogen sensitive layer is generally 20-200 nm. In this embodiment, the thickness of the hydrogen sensitive layer is selected to be 100 nm. In the hydrogen sensitive layer, the molar ratio Pd:W=1:50. The resistivity of the n-type silicon wafer is 1-10Ω·cm, and the graphene is single-layer graphene.

[0043] The preparation method of the above-mentioned highly sensitive hydrogen sensor at room temperature comprises the following steps:

[0044] S1: Fabrication of graphene / Si heterostructure Schottky junction:

[0045] S1-1: Etching the silicon dioxide on the surface of the n-type silicon wafer to ob...

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Abstract

The invention relates to a high-sensitivity hydrogen sensor at a room temperature and a preparation method thereof. The hydrogen sensor comprises a substrate and a hydrogen sensitive layer in sequence, and the hydrogen sensitive layer is a palladium-doped tungsten trioxide film. The preparation method comprises the following steps: (1) a graphene/Si heterostructure Schottky junction is prepared; (2) a tungsten trioxide sol is prepared; and (3) spin coating of the obtained tungsten trioxide sol on the graphene/Si heterostructure Schottky junction is carried out to obtain a gasochromic WO3/graphene/Si series sensor, that is, the high-sensitivity hydrogen sensor at the room temperature. In comparison with the prior art, visual detection can be carried out, the reaction response time is short,the sensitivity is high, the use is convenient, the operation is easy, and the purpose of accurately and timely detecting hydrogen leakage is thus achieved.

Description

technical field [0001] The invention relates to the technical field of photoelectric conversion, in particular to a preparation method of a high-sensitivity hydrogen sensor at room temperature. Background technique [0002] Due to its non-toxic, clean and renewable characteristics, hydrogen has been widely used in various industries in recent years. Simultaneously because hydrogen has a very wide explosion limit (4~74vol%) in the air and low ignition point, flame propagation speed is fast, therefore, needs to have a sensitive detection method to leaked hydrogen. However, since hydrogen is a colorless and odorless gas, the development of a highly sensitive hydrogen sensor for detecting hydrogen concentration and hydrogen leakage in the environment has become an issue of increasing concern. One of the key points in the field of sensor research. So far, various materials such as carbon nanotubes (CNTs), metal oxides, nitrides, polymers, and metals have been extensively invest...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/78G01N21/77G01N21/27
CPCG01N21/27G01N21/77G01N21/783G01N2021/7753G01N2021/7783
Inventor 高国华祁万钰张增星吴广明王浩然朱琼沈军岑定成于成龙
Owner TONGJI UNIV
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