Infrared waveband SPR refractive index sensor

A technology of refractive index sensor and infrared band, which is applied in the field of infrared band refractive index sensor, can solve problems such as difficulty in making high-sensitivity sensors, and achieve the effect of expanding the range of GH displacement

Inactive Publication Date: 2019-08-27
HUNAN NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the existing GH displacement is usually very small, it is difficult to make a high-sensitivity sensor

Method used

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  • Infrared waveband SPR refractive index sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: The high refractive index prism of the sensor is a semi-cylindrical glass prism, and the material of the prism is BK7 glass. The thickness of the sensing medium layer is 30nm-50nm, and the refractive index is 1.000RIU. The thickness of the graphene layer is 0.34nm, and the thickness of the hexagonal boron nitride is 3mm. The incident beam is transverse magnetically polarized light, and the working wavelength is 13.14 μm. The working Fermi level is 0.75eV. Depend on figure 2 (a) It can be seen that when the thickness of the sensing layer is changed, it can be found that the GH shift value L is the largest when the thickness of the sensing layer is 30 nm. Therefore, in order to enhance the GH shift and make the phenomenon more obvious, we choose a sensing medium layer thickness of 30nm for this sensor. figure 2 The high-index prism of the sensor in (b) is a semi-cylindrical glass prism. The thickness of the sensing medium layer is 30nm, and the refrac...

Embodiment 2

[0027] Embodiment 2: The high refractive index prism of the sensor is a semi-cylindrical glass prism, and the material of the prism is BK7 glass. The thickness of the sensing medium layer is 30nm, and the refractive index is 1.000RIU. The thickness of the single-layer graphene layer is 0.34nm, and the thickness of the hexagonal boron nitride is 3mm. The incident beam is transverse magnetically polarized light, and the working wavelength is 13.14 μm. The working Fermi level is 0.75eV. Depend on image 3 It can be seen that high sensitivity is obtained when the resonance angle is close to the resonance peak. Therefore, we choose an incident angle with high sensitivity and large GH shift. At this time, the effective refractive index was 1.5513RIU, and the incident angle was 45.08°. Incident at this angle, the sensor is more sensitive.

Embodiment 3

[0028] Embodiment 3: The high refractive index prism of the sensor is a semi-cylindrical glass prism, and the material of the prism is BK7 glass. The thickness of the sensing medium layer is 30nm, and the refractive index is 1.000 / 1.003RIU. The thickness of the graphene layer is 0.34nm, and the thickness of the hexagonal boron nitride is 3mm. The incident beam is transversely magnetically polarized. The working Fermi level is 0.75eV. Depend on Figure 4 It can be seen that when the wavelength of the incident light changes, the GH shift of the reflected light also changes, resulting in a peak. Under a fixed angle of incidence, the working wavelength is selected at the middle position of the falling edge of the resonance peak, that is, 13.128 μm. Here the sensor can get good linearity and sensitivity. When the refractive index of the sensing medium changes from 1.000RIU to 1.003RIU, the GH displacement changes by 8*λ. Calculated by the formula, the sensitivity of the sensor...

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Abstract

The invention discloses an infrared waveband SPR refractive index sensor, which comprises a high-refractive-index prism, a sensing medium layer, a graphene layer and hexagonal boron nitride, wherein the graphene layer, the sensing medium layer, and the high-refractive-index prism are arranged on the hexagonal boron nitride in sequence; the high-refractive-index prism is a semi-cylindrical glass prism; a voltage source is externally connected between the graphene layer and the hexagonal boron nitride; and a positive electrode of the voltage source is connected to the graphene layer, and a negative electrode of the voltage source is connected to the hexagonal boron nitride. When an infrared light source emits a light beam to enter the structure at a certain angle and the light beam is reflected back to the original medium, a GH displacement value can be detected through a displacement detector. According to the infrared waveband SPR refractive index sensor, the GH displacement of the infrared waveband can be greatly enhanced, the sensitivity of the sensor can be improved while flexible regulation is performed, and the detection of the refractive index is realized. The infrared waveband SPR refractive index sensor has the advantages of being simple in structure, flexible to select, high in sensitivity and the like.

Description

technical field [0001] The present invention relates to a refractive index sensor in the infrared band, in particular to a Gus-Hanchen (Gussian-Hanshin) which is based on a graphene-hexagonal boron nitride supercrystalline structure and realizes enhanced infrared light. GH) displacement, so as to achieve a high-sensitivity SPR sensor for detecting the refractive index of the medium. Background technique [0002] Surface plasmon resonance (SPR) detection technology is a new type of biological detection technology. It has the advantages of high accuracy, real-time monitoring, and rapid detection. SPR is a surface plasmon wave excited at the interface due to the strong coupling of two electromagnetic wave modes. Under the condition of satisfying the surface plasmon resonance, due to the resonance phenomenon, most of the energy of the incident light is converted into the energy of the evanescent wave, thus the GH shift is amplified. Since the GH shift is very sensitive to th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/41
CPCG01N21/41G01N2021/4166
Inventor 郑之伟卢方圆林威刘子豪
Owner HUNAN NORMAL UNIVERSITY
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