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Preparation process of high-quality titanium-based boron-doped diamond film electrode

A technology of boron-doped diamond and thin-film electrodes, which is applied in the field of preparation technology of titanium-based boron-doped diamond thin-film electrodes, can solve the problems of short life, inability to produce in a large area, and poor bonding force of titanium-based diamond electrodes, so as to improve the bonding force, Ensures electrical conductivity and workability, and improves macroscopic roughness

Inactive Publication Date: 2019-08-30
莫兰
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Problems solved by technology

[0004] The purpose of the present invention is to provide a low-cost, high-production-efficiency high-quality preparation process for titanium-based boron-doped diamond film electrodes, which solves the problem of poor bonding force, short life, and inability to produce large-area titanium-based diamond electrodes produced by traditional processes. Production and other issues

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  • Preparation process of high-quality titanium-based boron-doped diamond film electrode
  • Preparation process of high-quality titanium-based boron-doped diamond film electrode

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Embodiment Construction

[0023] The present invention is further illustrated by the following examples: According to the following examples, the present invention can be better understood. However, those skilled in the art can easily understand that the specific material ratios, process conditions and results described in the examples are only used to illustrate the present invention, and should not and will not limit the present invention described in the claims.

[0024] combine figure 1 and figure 2 As shown, a high-quality titanium-based boron-doped diamond film electrode preparation process includes the following specific steps:

[0025] (1), cleaning: cleaning the lining body, first, the lining body 1 is cleaned by a rolling brush, and then the lining body 1 is put into deionized water, sodium hydroxide, and acetone solution successively for ultrasonic cleaning for 1-3 minutes;

[0026] (2) Shot peening treatment: select ceramic shot peening with a particle size of 1-2000 μm, and use a shot p...

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Abstract

The invention discloses a preparation process of a high-quality titanium-based boron-doped diamond film electrode. The preparation process of the high-quality titanium-based boron-doped diamond film electrode comprises the following concrete steps of (1) cleaning: cleaning a substrate; (2) shot blasting: using a shot blasting machine for shot blasting the cleaned substrate; (3) electrochemically oxidizing: infiltrating the shot-blasted substrate in an electrolytic tank, and oxidizing; (4) planting a diamond crystal seed: infiltrating the oxidized substrate into a boron-doped diamond crystal seed solution; and (5) carrying out chemical vapor deposition (CVD): placing the substrate planted with the diamond crystal seed in a hot wire CVD chamber. According to the preparation process of the high-quality titanium-based boron-doped diamond film electrode, the production cost of the diamond electrode is greatly reduced, a binding force between a diamond film and the titanium substrate is improved, the service life is prolonged, the preparation process is simple, and the mass production efficiency is improved at the same time.

Description

technical field [0001] The invention relates to the technical field of electrodes, in particular to a preparation process of a high-quality titanium-based boron-doped diamond film electrode. Background technique [0002] Diamond is considered to be an excellent electrode material, because diamond has excellent physical properties and good chemical inertness, and can remove organic pollutants in sewage in extremely complex and harsh environments (for example: strong acid-base environment). Having good electrical conductivity is one of the important requirements for electrode materials, however, pure diamond is a good insulator. To make diamond conductive, the most common method is boron doping. After the doped boron atoms enter the diamond lattice, the diamond lattice will be distorted, thereby changing the diamond energy band structure, so that electrons can transition smoothly, so boron-doped diamond has good conductivity. In actual production, chemical vapor deposition (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/02C25D11/26
CPCC23C16/02C23C16/271C25D11/26
Inventor 莫兰
Owner 莫兰
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