Storage cell, memory and data writing method
A technology for writing storage units and data, which is applied in the field of memory and can solve problems such as slow memory writing speed
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0083] Example 1
[0084] Such as Picture 9 As shown, the storage unit includes a spin orbit moment providing structure 10 and two storage structures 20, which are a first storage structure and a second storage structure, respectively. The spin orbit moment providing structure 10 includes a first spin orbit moment providing line 11 With the second spin-orbit moment providing line 12, the two storage structures 20 have the same structure, such as Picture 10 As shown, it includes a free layer 21, a tunnel layer 22, and a fixed layer 23 from bottom to top. The free layer 21 of the first storage structure is arranged in contact with the first spin orbit moment providing line 11, and the free layer of the second storage structure 21 is arranged in contact with the second spin orbit moment providing line 12. Such as Picture 10 As shown, the magnetization directions of the free layer 21 and the fixed layer 23 in each storage structure 20 are perpendicular to the thickness of the stor...
Example Embodiment
[0089] Example 2
[0090] The spin orbit moment providing structure 10 is the same as that of the first embodiment. The two storage structures 20 are the first storage structure and the second storage structure. The two storage structures 20 have the same structure, such as Figure 4 As shown, it includes a free layer 21, a tunnel layer 22, and a fixed layer 23 from bottom to top. The free layer 21 of the first storage structure is arranged in contact with the first spin orbit moment providing line 11, and the free layer of the second storage structure 21 is arranged in contact with the second spin orbit moment providing line 12. Such as Figure 4 As shown, the magnetization directions of the free layer 21 and the pinned layer 23 in each storage structure 20 are perpendicular to the thickness of the storage structure 20, and both are parallel or anti-parallel to the write current direction of the spin orbit moment providing structure 10.
[0091] Each layer in each memory structure...
Example Embodiment
[0094] Example 3
[0095] The difference from Example 2 is that Figure 5 As shown, the storage structure further includes a magnetization layer 24, and the magnetization layer is used to provide a magnetic field parallel to the thickness direction of the storage structure 20 described above.
[0096] The bias magnetic field provided by the magnetization layer causes the magnetization direction of the free layer to deviate from the plane of the memory cell, that is, a symmetry break is provided. The moment of the free layer magnetic moment subjected to the equivalent field contains a horizontal component, which can ensure that the final magnetization direction of the free layer corresponds to the direction of the write current one-to-one.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap