Electron injection enhanced dual-mode MOS controlled thyristor and manufacturing method thereof

Abstract

The invention discloses an electron injection enhanced dual-mode MOS controlled thyristor. An n<+> cathode region is arranged inside a p base region in the center of the upper part of an n<-> drift region; a p<++> shunt region is arranged outside the upper part of an n CS layer around the periphery of the p base region, and a cathode electrode K is formed by aluminum layers on the upper surface ofthe p<++> shunt layer and the upper surface of the n<+> cathode region together; the upper surfaces of a part of the n<+> cathode region, the p base region, the n CS layer and a part of the p<++> shunt region are provided with a gate oxide layer together, and a polycrystalline silicon layer is arranged on the upper surface of the gate oxide layer as a grid electrode G; a phosphorosilicate glass layer is arranged between the cathode electrode K and the grid electrode G; and the n<-> drift region is provided with an n FS layer, a p<+> anode region and a metallized anode A downwards in sequence.The invention also discloses a preparation method of an IE-Bi-MCT. According to the IE-Bi-MCT structure disclosed by the invention, the on-state voltage drop of the device can be reduced obviously, and the cellular maximum controllable current is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an electron injection-enhanced dual-mode MOS control thyristor, and also relates to a manufacturing method of the electron injection-enhanced dual-mode MOS control thyristor. Background technique [0002] For high-voltage and high-power semiconductor devices, reducing their on-state voltage drop and conduction loss is very critical. Compared with the traditional thyristor, although the insulated gate bipolar transistor (IGBT) can increase the switching speed of the device, its on-state voltage drop is higher; although the MOS-controlled thyristor (MCT) can reduce its on-state voltage drop, the process Difficulty; base resistance controlled thyristor (BRT) can solve the difficult problem of MCT process, and its on-state voltage drop is also similar to MCT, but due to the wide cathode area of ​​BRT, the current distribution in it is uneven, and the device cannot b...

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Problems solved by technology

[0004] The purpose of the present invention is to provide an electron injection enhanced dual-mode MOS control thyristor, which solves the problem that the device structure in the prior art is difficult to effectively reduce the on-state voltage drop of the device and increase the turn-off speed, and cannot meet the application requirements of high-voltage and high-power switches. The problem

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