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Gate control bipolar-field effect composite element semiconductor based lateral double-diffused metal oxide semiconductor transistor

An oxide semiconductor, lateral double diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., to prevent secondary breakdown, reduce on-resistance, and increase on-current

Active Publication Date: 2019-09-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the on state, due to the short circuit between the base region and the source region, the parasitic bipolar transistor is still not turned on, and the device can only conduct electricity in the normally turned on channel

Method used

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  • Gate control bipolar-field effect composite element semiconductor based lateral double-diffused metal oxide semiconductor transistor
  • Gate control bipolar-field effect composite element semiconductor based lateral double-diffused metal oxide semiconductor transistor

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Embodiment Construction

[0029] Such as figure 1 As shown, the gate-controlled bipolar-field-effect compound element semiconductor-based lateral double-diffused metal-oxide-semiconductor transistor:

[0030] Elemental semiconductor substrate 1, specifically silicon or germanium, with a doping concentration of 1×10 13 cm -3 ~1×10 15 cm -3 ;

[0031] An epitaxial layer is formed on the substrate 1; the specific material is silicon or germanium, and the doping concentration is 1×10 15 cm -3 ~1×10 16 cm -3 ;

[0032] forming a base region 2 on the epitaxial layer;

[0033] Forming an active region on the surface of the device;

[0034] a gate insulating layer formed on the active region, and forming a gate 8 above the gate insulating layer;

[0035] A source region 3 and a base region contact 4 are formed on the base region while a channel is formed on the base region; wherein, the doping concentration of the base region contact is 1×10 20 cm -3 ;

[0036] forming a drain region 5 on the dri...

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Abstract

The invention discloses a gate control bipolar-field effect composite element semiconductor based lateral double-diffused metal oxide semiconductor transistor. A substrate of a device is an element semiconductor material; a base electrode is formed on the surface of base contact; the base electrode is isolated from a source electrode and electrically connected with a gate electrode; it is satisfied that when a voltage is input to the gate electrode, the voltage obtained by the base region enables a bipolar transistor parasitized on the device to be turned on; and a traditional electrode connecting mode that a base region and a source region in an element semiconductor based lateral double-diffused transistor are short-circuited is replaced. Compared with a traditional device, the device has the advantages that while the device has the same breakdown voltage, the breakover current of the device is greatly increased, and the on resistance of the device is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a lateral double-diffusion transistor. Background technique [0002] Lateral Double-diffused MOSFET (LDMOS) has the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-subconduction, small power drive, and switching speed Advanced advantages are at the heart of smart power circuits and high-voltage devices. Due to the growing market demand for portable power management and automotive electronics, it is receiving increasing attention across the globe. [0003] The traditional LDMOS uses a short-circuit electrode connection method between the base region and the source region. In the off state, both the base region and the source region of the device are grounded, which can prevent the secondary breakdown of the device from being turned on by the parasitic bipolar transistor between the source region, ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0611H01L29/7816
Inventor 段宝兴董自明杨银堂
Owner XIDIAN UNIV
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