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A gate-controlled bipolar-field-effect compound element semiconductor-based lateral double-diffused metal oxide semiconductor transistor

A lateral double diffusion, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effect of increasing on-current, reducing on-resistance, and preventing secondary breakdown

Active Publication Date: 2021-04-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the on state, due to the short circuit between the base region and the source region, the parasitic bipolar transistor is still not turned on, and the device can only conduct electricity in the normally turned on channel

Method used

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  • A gate-controlled bipolar-field-effect compound element semiconductor-based lateral double-diffused metal oxide semiconductor transistor
  • A gate-controlled bipolar-field-effect compound element semiconductor-based lateral double-diffused metal oxide semiconductor transistor

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Embodiment Construction

[0029] like figure 1 As shown, the gate-controlled bipolar-field-effect compound element semiconductor-based lateral double-diffused metal-oxide-semiconductor transistor:

[0030] Elemental semiconductor substrate 1, specifically silicon or germanium, with a doping concentration of 1×10 13 cm -3 ~1×10 15 cm -3 ;

[0031] An epitaxial layer is formed on the substrate 1; the specific material is silicon or germanium, and the doping concentration is 1×10 15 cm -3 ~1×10 16 cm -3 ;

[0032] forming a base region 2 on the epitaxial layer;

[0033] Forming an active region on the surface of the device;

[0034] a gate insulating layer formed on the active region, and forming a gate 8 above the gate insulating layer;

[0035] A source region 3 and a base region contact 4 are formed on the base region while a channel is formed on the base region; wherein, the doping concentration of the base region contact is 1×10 20 cm -3 ;

[0036] forming a drain region 5 on the drift ...

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Abstract

The invention discloses a gate-controlled bipolar-field effect compound element semiconductor-based lateral double-diffused metal oxide semiconductor transistor. It is isolated from the source and electrically connected to the gate to meet: when the gate is connected to the voltage, the voltage obtained by the base region makes the parasitic bipolar transistor of the device turn on, replacing the base region and the source region in the traditional elemental semiconductor lateral double-diffusion transistor Short-circuited electrode connection. Compared with the traditional device, the invention greatly increases the on-current of the device and reduces the on-resistance of the device while ensuring the same breakdown voltage of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a lateral double-diffusion transistor. Background technique [0002] Lateral Double-diffused MOSFET (LDMOS) has the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-subconduction, small power drive, and switching speed Advanced advantages are at the heart of smart power circuits and high-voltage devices. Due to the growing market demand for portable power management and automotive electronics, it is receiving increasing attention across the globe. [0003] The traditional LDMOS uses a short-circuit electrode connection method between the base region and the source region. In the off state, both the base region and the source region of the device are grounded, which can prevent the secondary breakdown of the device from being turned on by the parasitic bipolar transistor between the source region, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0611H01L29/7816
Inventor 段宝兴董自明杨银堂
Owner XIDIAN UNIV
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