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Method for preparing BaM ferrite nano-film of two-dimensional net-shaped structure and with c-axis in-plane orientation based on AAO template

A two-dimensional network, nano-film technology, applied in nanotechnology, chemical instruments and methods, iron compounds, etc., to achieve multi-selective effects

Pending Publication Date: 2019-09-17
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the preparation of in-plane oriented BaM films is still limited to vacuum conditions, and the choice of substrates is also limited to a-plane and m-plane Al with better lattice matching. 2 o 3 equal base

Method used

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  • Method for preparing BaM ferrite nano-film of two-dimensional net-shaped structure and with c-axis in-plane orientation based on AAO template
  • Method for preparing BaM ferrite nano-film of two-dimensional net-shaped structure and with c-axis in-plane orientation based on AAO template

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[0039] (1) Orient the crystal to (0001) Al 2 o 3 The substrate was ultrasonically cleaned in acetone solution for 10 min, then in absolute ethanol solution for 10 min, and finally in deionized water for 10 min, and dried with nitrogen.

[0040] (2) Al 2 o 3 Immerse the substrate in absolute ethanol and take it out after 1 min. When the ethanol is not completely volatilized, attach the through-hole AAO template on the substrate and let it dry; then, use a glass rod to dip a very small amount of ethanol and drop it onto the substrate without the template. Area of ​​Al 2 o 3 On the substrate, let the ethanol diffuse spontaneously to the template area, and let it dry; repeat 2 times.

[0041] (3) Put the substrate transferred in step (2) into an oven and bake for a certain period of time. The oven temperature is 90°C, and the drying time is 2 minutes; take it out and let it cool down to room temperature.

[0042] (4) Put the sample processed in step (3) into the PLD chamber...

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Abstract

The invention discloses a method for preparing a BaM ferrite nano-film of a two-dimensional net-shaped structure and with c-axis in-plane orientation based on an AAO template. Multiple types of chips can serve as a substrate, through a mold plate transfer technology, the AAO template of a through hole is transferred to the chips, and then, through the vacuum physical deposition technology, the BaM ferrite nano-film of the two-dimensional net-shaped structure and with the c-axis in-plane orientation is prepared at the low chip temperature. Compared with traditional PLD preparing of the BaM thin film with the c-axis in-plane orientation, for selection of the chips, more selectivity is achieved, deposition on multiple chips such as Al2O3, Si and other chips can be carried out, the BaM ferrite nano-film of the two-dimensional net-shaped structure and with the c-axis in-plane orientation is prepared, the preparing method is easy to operate, and easy to achieve, and preparing of a novel magnetic thin film structure with in-plane orientation is achieved.

Description

technical field [0001] The invention belongs to the technical field of BaM ferrite thin films, and relates to a method for preparing BaM ferrite thin films with a two-dimensional network structure and c-axis in-plane orientation based on AAO templates, and specifically relates to preparing c-axis planes on any substrate. The invention relates to a BaM ferrite nano-film with two-dimensional network and inner orientation, which belongs to the technical field of nano-materials. Background technique [0002] With the rapid development of electronic information and communication technology, electronic components continue to develop in the direction of miniaturization, high frequency, and integration, so that planarization technologies such as thick film and thin film have been greatly improved in the miniaturization of electronic components. Advantage. Ferrite components are components based on ferrimagnetic ferrite materials, mainly including filters, circulators, isolators, ph...

Claims

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Application Information

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IPC IPC(8): C23C14/04C23C14/08C23C14/58C01G49/00B82Y40/00
CPCB82Y40/00C01G49/00C23C14/042C23C14/085C23C14/5806
Inventor 郑辉陈伟张阳郑鹏郑梁
Owner HANGZHOU DIANZI UNIV
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