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Breakdown detection method based on IGBT unit

A detection method and technology of detection conditions, applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc., can solve problems such as equipment explosion and IGBT through damage, and achieve the effect of large detection range and simple algorithm

Active Publication Date: 2019-09-17
FUZHOU DANLAW XICHENG ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of device damage, once the device is powered on, it is very easy to cause IGBT through damage, and in severe cases, the entire device will be completely or partially blown up

Method used

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  • Breakdown detection method based on IGBT unit

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Please refer to figure 1 , Embodiment 1 of the present invention is:

[0079] A kind of breakdown detection method based on IGBT unit, comprises the following steps:

[0080] S1. Presetting the switching time of the breakdown detection of the IGBT unit; the switching time is a certain period of time;

[0081] S2. Judging whether the output duration of the IGBT unit reaches the switching time; the judging method for judging whether the output duration of the IGBT unit reaches the switching time is:

[0082] Drive the IGBT unit into the working state and start timing to get the first time;

[0083] judging whether the first time reaches the switching time;

[0084] If so, it is determined that the output duration of the IGBT unit reaches the switching time;

[0085] If not, it is determined that the output duration of the IGBT unit has not reached the switching time.

[0086] S3. If the output duration of the IGBT unit reaches the switching time, it is judged whether...

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Abstract

The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method based on an IGBT unit. When the output duration of the IGBT unit reaches switching time, the output power of the IGBT at the current moment is judged, and then the IGBT unit is controlled for switching a current working condition to a breakdown detection state for carrying out breakdown detection on the IGBT unit as long as the output power of the IGBT unit meets conditions capable of carrying out breakdown detection; according to the breakdown detection method designed in the scheme, low-side drive and high-side drive breakdown conditions for the IGBT unit can be detected, a drive mode of the IGBT unit does not need to be changed, the breakdown condition of the IGBT unit can be detected through timing state switching in preset switching time, the algorithm is simple, and the detected range is large.

Description

technical field [0001] The invention relates to the technical field of IGBT breakdown detection, in particular to a breakdown detection method based on IGBT units. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). It has the advantages of high input impedance of MOSFET and low turn-on voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency con...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/261
Inventor 谢美珍郑昕斌
Owner FUZHOU DANLAW XICHENG ELECTRONICS TECH CO LTD
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