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Verification method based on NAND FLASH memory, terminal device and storage medium

A verification method and memory technology, applied to the verification method based on NANDFLASH memory, terminal equipment and storage media, can solve the problems of two-bit or three-bit effective detection and error correction processing, etc., to avoid The effect of large amount of calculation defects, small amount of calculation, and high reliability guarantee

Active Publication Date: 2019-09-24
PAX COMP TECH SHENZHEN
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Problems solved by technology

[0005] In view of this, the embodiment of the present application provides a verification method, terminal equipment and storage medium based on NAND FLASH memory, to solve the problem that the current error correction algorithm cannot effectively detect and correct two or three bits Dealing with the problem

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  • Verification method based on NAND FLASH memory, terminal device and storage medium
  • Verification method based on NAND FLASH memory, terminal device and storage medium

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Embodiment Construction

[0053] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

[0054] In order to illustrate the technical solutions described in this application, specific examples are used below to illustrate.

[0055] Data storage is usually divided into two stages: data writing and data reading. In the data writing stage, it is necessary to generate an error correction code of the original data, and write the original data together with the error correctio...

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Abstract

The invention is applicable to the technical field of computers. The invention provides a verification method based on a NAND FLASH memory, a terminal device and a storage medium. The method comprises the following steps: when writing data, generating matrices based on raw data, obtaining sub error correction codes in four directions through the matrix, reading data from a memory, combining four sub error correction code segments into an original error correction code, generating a calculation error correction code by reading the data when the data is read, reading a verification error correction code from the memory, determining whether the read data has an error by comparing the calculation error correction code with the verification error correction code, and performing error correction processing on the read data when the error occurs. According to the verification method based on the NAND FLASH memory, the terminal device and the storage medium provided by the embodiment of the invention, one-bit, two-bit and three-bit error codes in the NAND FLASH memory page can be corrected, and a higher reliability guarantee can be provided for the storage of the NAND FLASH.

Description

technical field [0001] The present application belongs to the field of computer technology, and in particular relates to a verification method based on NAND FLASH memory, a terminal device and a storage medium. Background technique [0002] FLASH is a solid-state, electrically erasable and writable computer storage medium that does not lose information when power is turned off. According to the implementation structure, FLASH is divided into NOR FLASH and NAND FLASH. Among them, NAND FLASH refers to the FLASH with "NAND gate" as the storage unit structure. NAND FLASH is composed of multiple blocks, and each block is composed of the same number of pages. Each page is composed of a data area and a redundant area. The redundant area is generally used to store check and error correction codes. [0003] The data stored in the NAND FLASH storage device is usually prone to flipping of individual bits. Bit flipping can occur in any part of the memory operation such as data writing...

Claims

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Application Information

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IPC IPC(8): G11C29/42G11C16/10
CPCG11C16/10G11C29/42
Inventor 董时舫
Owner PAX COMP TECH SHENZHEN
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