Flip-chip light emitting diode chip and manufacturing method thereof

Abstract

The invention discloses a flip-chip light emitting diode chip and a manufacturing method thereof. After a flip-chip light emitting structure array is prepared on the growth surface of a transparent substrate, the transparent substrate is thinned from one side of the back surface to expose a metamorphic layer, so that the light output surface of the flip-chip light emitting diode chip is a roughened surface, the influence on the refractive indexes of the transparent substrates and air is reduced, and the light output efficiency of the flip-chip light emitting diode chip is improved. At the sametime, the metamorphic layer provided by the invention is formed before the manufacture of the flip-chip light emitting structure array, and the flip-chip light emitting structure array is manufactured when the transparent substrate is thicker, which reduces the fragmentation probability of the transparent substrate in the manufacturing process. After the transparent substrate is thinned to exposethe metamorphic layer, no other structure is manufactured, and a breaking process is carried out directly, which further reduces the fragmentation probability of the transparent substrate in the manufacturing process. The production efficiency in the manufacturing process is improved ultimately.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and more specifically relates to a flip-chip light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, low energy consumption, energy saving and environmental protection, and high safety. Another leap in the history of human lighting after incandescent lamps and fluorescent lamps is driving the upgrading of traditional lighting and display industries. It is widely used in lighting, display screens, signal lights, backlights, toys and other fields. [0003] After the conventional flip-chip LED chip separates the chip from the epitaxial wafer process, the light emerges from the side of the transparent substrate (such as sapphire substrate...

AI Technical Summary

Problems solved by technology

[0003] After the conventional flip-chip LED chip separates the chip from the epitaxial wafer process, the light emerges from the side of the transparent substrate (such as sapphire substrate) after grinding and thinning. At the corner, the outgoing light will be totally reflected, and the light cannot exit

Calculated according to the refractive index of sapphire 1.6 and the refractive index of air 1.0, the critical angle of total reflection is 38.6°, that is, the light with an incident angle exceeding 38.6° cannot be emitted, which makes the light extraction efficiency of the existing flip-chip LED chip low. Efficiency is only 42.89%

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