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Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators

A semiconductor and electrode technology, which is applied in the fields of semiconductor devices, power conversion devices, drive devices, vehicles and elevators, and can solve problems such as difficult detection

Active Publication Date: 2021-06-08
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Surge voltage is high voltage and occurs in a short time, so it is difficult to detect

Method used

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  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators
  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators
  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators

Examples

Experimental program
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Effect test

no. 1 Embodiment approach

[0030] The semiconductor device according to the present embodiment is a semiconductor device comprising: a first diode having a first anode and a first cathode for communicating with a diode having a first electrode, a second electrode, and a gate electrode. Any one of the first electrode and the second electrode of the semiconductor element is electrically connected; the first capacitor has a first end and a first other end, and the first end is electrically connected to the first cathode; a bias element has a first The end of the biasing element and the end of the second biasing element, the end of the first biasing element is electrically connected to the first cathode and the first end, and the end of the second biasing element is used to connect with the positive pole and the negative pole The positive pole of the DC power supply is electrically connected; the second diode has a second anode and a second cathode, and the second anode is electrically connected to the other...

no. 2 Embodiment approach

[0099] The semiconductor device of this embodiment differs from the first embodiment in that the bias element 140 further includes a fourth diode 144 connected in parallel to the resistance element 142 . Here, the description of the content overlapping with the first embodiment is omitted.

[0100] Figure 8It is a schematic diagram of the semiconductor device of this embodiment. The semiconductor device of this embodiment is a surge voltage detection circuit 103 . The semiconductor module 153 includes a surge voltage detection circuit 103 , a low-side transistor 10 and a high-side transistor 20 .

[0101] The bias element 140 further includes a fourth diode 144 connected in parallel to the resistance element 142 . The fourth diode 144 has a fourth anode 144a and a fourth cathode 144b. The fourth cathode 144b is electrically connected to the first cathode 111b and the first end 112a.

[0102] When the resistance component of the resistance element 142 used for the bias el...

no. 3 Embodiment approach

[0108] The semiconductor device of this embodiment differs from the first and second embodiments in that the bias element 140 is an inductance element 146 . Here, the description of the contents overlapping with those of the first and second embodiments is omitted.

[0109] Figure 9 It is a schematic diagram of the semiconductor device of this embodiment. The semiconductor device of this embodiment is a surge voltage detection circuit 104 . The semiconductor module 154 includes a surge voltage detection circuit 104 , a low-side transistor 10 and a high-side transistor 20 . When the voltage between the first cathode 111b and the first end 112a changes with the detection of the surge voltage, even if the DC power supply 30 fixes the voltage between the first cathode 111b and the first end 112a to V through the inductance element 146 DD , since the counter electromotive force acts on the inductance element 146, it cannot be fixed to V in a short time DD . Therefore, in a sh...

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Abstract

The present invention relates to a semiconductor device, a power conversion device, a drive device, a vehicle, and an elevator. The semiconductor device of the embodiment includes: a first diode having a first anode and a first cathode, and the first anode is used in connection with the first electrode and the second electrode of the semiconductor element having the first electrode, the second electrode and the gate electrode. Any one of them is electrically connected; a first capacitor has a first end and a first other end, and the first end is electrically connected to the first cathode; a bias element has a first bias element end and a second bias element end , the end of the first bias element is electrically connected to the first cathode and the first end, and the end of the second bias element is used to electrically connect with the positive pole of the DC power supply having the positive pole and the negative pole; the second diode has the second anode and the The second cathode, the second anode is electrically connected to the first other end; the second capacitor has the second end and the second other end, the second end is electrically connected to the second cathode; the switch is electrically connected to the second capacitor in parallel Between one end of the second end and the other end of the second; an analog-to-digital converter or a sample-and-hold circuit electrically connected to the second cathode and the second end; a third diode having a third anode electrically connected to the other end of the second, and connected to the second end. The third cathode electrically connected to the other end of the first and the second anode.

Description

[0001] Citations for Associated Applications [0002] This application is based on Japanese Patent Application No. 2018-055173 (filing date: March 22, 2018), from which priority is claimed. This application incorporates the entire content of this application by referring to this application. technical field [0003] Embodiments of the present invention relate to a semiconductor device, a power conversion device, a drive device, a vehicle, and an elevator. Background technique [0004] In a power transistor that switches at high speed, for example, a surge voltage due to parasitic inductance may be generated at the time of turning off. When a surge voltage is generated, damage to the gate insulating film or ringing of the circuit occurs, which pose a problem. Surge voltage is high voltage and occurs in a short time, so it is difficult to detect. Contents of the invention [0005] The technical problem to be solved by the present invention is to provide a semiconductor de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/00G01R19/25
CPCH02M7/003G01R19/2509H02M1/34H02M7/53875H03K17/08148H03K17/168H03K17/162H03K17/081H02M1/342H02M1/32H02M7/5387H02P27/06B61C3/00B66B11/043B60R16/023H02H9/04
Inventor 池田健太郎
Owner KK TOSHIBA
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