White light Micro LED structure based on inverted structure
A white light, flip-chip technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., to achieve the effect of easy processing and changing structure
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Embodiment 1
[0044] Such as figure 1 As shown, this embodiment provides a white light Micro LED structure based on a flip-chip structure, specifically realizing a white light micro LED that integrates an LED chip and a white light conversion scheme, including a circuit substrate 1 and an N-type GaN6, on which the circuit substrate P electrodes 3 and N electrodes 4 are arranged alternately at equal intervals between 1 and N-type GaN6, the P electrodes 3 are connected to N-type GaN6 through P-type GaN5, and between the P-type GaN5 and N-type GaN6 is set Quantum wells 7, a number of Micro LED chips 2 are evenly spaced above or inside the N-type GaN6, and quantum dot materials are poured into the Micro LED chips 2, and the gaps between each of the Micro LED chips 2 The gaps are filled with black glue 8, and a transparent protective layer 9 covering the MicroLED chip 2 is arranged above the N-type GaN6; through holes 10 are formed on both sides of the N electrode 4, and the quantum dot material...
Embodiment 2
[0060] The difference from Example 1 is that in this implementation:
[0061] Such as figure 2As shown, when the quantum well is a blue light quantum well, the first two Micro LED chips of each chipset are sequentially filled with red quantum dot material and green quantum dot material, and the third chip is single-chip without any processing.
Embodiment 3
[0063] The difference from Example 1 is that in this implementation:
[0064] Such as image 3 shown and Figure 6 , when the Micro LED chip is an etched structure formed on the inside of the upper surface of N-type GaN embedded, the realization method of the white light Micro LED structure includes:
[0065] Etching the P-type GaN, one part is etched through the quantum well, and the other part is not etched;
[0066] Add a P electrode under the incompletely etched P-type GaN;
[0067] Add an N electrode to the lower part of the N-type GaN exposed due to complete etching;
[0068] Thicken the N-type GaN, then etch the N-type GaN, and evenly separate several independent Micro LED chips at equal intervals;
[0069] Fill the space between adjacent Micro LED chips with black glue;
[0070] Each Micro LED chip separated on N-type GaN is etched with grooves and filled with quantum dot materials;
[0071] adding a transparent protective layer on the N-type GaN;
[0072] Seal ...
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