Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A storage system and calculation method supporting in-storage calculation

A storage system and computing technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problem of no computing memory, etc., achieve the effect of reducing data transmission, reducing and power consumption wall effect, and improving computing speed

Active Publication Date: 2021-01-05
SUN YAT SEN UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently no comparable computational memory on the market

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A storage system and calculation method supporting in-storage calculation
  • A storage system and calculation method supporting in-storage calculation
  • A storage system and calculation method supporting in-storage calculation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 1 As shown, a storage system supporting calculation in storage includes an SRAM array and m computing modules, the SRAM array includes a row address decoding module and n rows and m columns of SRAM storage units, and the row address decoding module includes Two groups of decoders, each of the calculation modules includes a Boolean logic calculation unit and a full addition calculation unit connected to each other, and each row of SRAM memory cells is connected with the Boolean logic calculation unit by two read bit lines, and the Boolean logic calculation unit and The full-add calculation units are connected, and each of the full-add calculation units is connected in sequence;

[0041] When the SRAM array is performing a read operation, it simultaneously reads the storage data stored by the SRAM cells on the two read word lines, the Boolean logic calculation unit performs Boolean operations on the storage data, and the full addition calculation unit perfo...

Embodiment 2

[0069] Such as Figure 8 As shown, this embodiment provides a computing method supporting in-storage computing, including the steps of writing data and reading data, and the step of reading data specifically includes the following steps:

[0070] S1. Obtain the address information to be read, and simultaneously read the stored data stored in the SRAM cells on the two read word lines according to the address information;

[0071] S2. Perform Boolean operations on the read stored data, and obtain multiple operation results;

[0072] S3. Perform full addition calculation on the stored data according to the operation result.

[0073] The method of this embodiment provides the address Addr of two word lines at a time when reading data i and Addr j , select the SRAM unit that needs to be read out and perform calculation in the storage through the row address decoder, that is, the data of two words is read out and calculated bit by bit at a time. At the same time, the data stored i...

specific Embodiment

[0078] The following combination Figure 1 to Figure 7 The above system and method are explained in detail.

[0079] combine figure 1 As shown, the SRAM computing memory includes n rows and m columns of SRAM storage units, and the main structure is composed of a typical SRAM array structure. The special feature is that two sets of decoders are used at the row address decoder, so that the SRAM array Two word lines can be selected at the same time during the read operation; for figure 2 In the 9T structure SRAM memory cell shown, the word line and the bit line are divided into two groups, that is, the read word line RWL, the write word line WWL, the read bit line RBL and RBLB, and the write bit line WBL and WBLB; A logic circuit is added to realize the in-storage computing function.

[0080] figure 1 The storage unit Cell in figure 2 The 9T structure SRAM storage unit shown in the following combination figure 2 Specifically explain the working principle of the read and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a storage system for supporting calculation in storage and a calculation method. The system comprises an SRAM array and m computing modules, the SRAM array comprises a row address decoding module and n rows and m columns of SRAM storage units, the row address decoding module comprises two groups of decoders; each calculation module comprises a Boolean logic calculation unitand a full-add calculation unit which are connected with each other, each column of SRAM storage units are connected with the Boolean logic calculation units through two read bit lines, the Boolean logic calculation units are connected with the full-add calculation units, and the full-add calculation units are connected in sequence. According to the invention, after data on two read word lines isread at the same time, Boolean operation and full-add operation are carried out, the function of in-memory calculation is realized, the data transmission between a CPU and a memory is reduced, and the time expenditure of memory access is reduced, so that the operation speed is greatly improved, the memory wall and power consumption wall effects are reduced, and the system and method can be widelyapplied to the technical field of integrated circuits.

Description

technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a storage system and a calculation method supporting in-storage calculation. Background technique [0002] In the traditional von Neumann computer architecture, the computer separates computation and storage in space, and the two communicate data through a data bus. The development trends of processors and memory chips are different: processors pursue high-frequency and high-speed calculations; memory pursues intensive and low-cost, so the speed is relatively slow. Therefore, the gap between processor and memory performance is widening year by year, and the effect of storage wall and power consumption wall is intensified. In recent years, the application of big data is in the ascendant, requiring computers to perform high-speed calculation and processing of massive data, and computational memory has become a research hotspot again. The basic design idea of ​...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4091G11C11/4094
CPCG11C11/4091G11C11/4094
Inventor 梁诗悦陈润浩曹天麟虞志益
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com