Transistor and manufacturing method thereof
A manufacturing method and technology for transistors, which are applied in the fields of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of contaminating carbon nanotubes, affecting device performance and reliability, and achieving a wide process window and high etching selection ratio. , the effect of significant etch resistance
Active Publication Date: 2019-10-22
BEIJING HUA TAN YUAN XIN ELECTRONICS TECH CO LTD
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[0005]
In the above-mentioned manufacturing method, the photoresist pollutes the carbon nanotubes, and the organic solution and dissolved organic matter and metal particles used to remove the photoresist also pollute the carbon nanotubes, which affects the performance and reliability of the device
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[0030] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For simplicity, a semiconductor device obtained after several steps may be described in one figure.
[0031] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0032] If it is to describe the situation directly on another layer or another area, the e...
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Abstract
The invention discloses a transistor and a manufacturing method thereof. The manufacturing method comprises the steps of: forming carbon nanotubes on a substrate; forming a capping layer covering thecarbon nanotubes; forming a gate stack on the carbon nanotubes; and removing part of the capping layer to form an opening; and forming an electrical connection structure in contact with the carbon nanotubes through the opening, wherein the capping layer is an oxide including a group IIIB element, or other oxide having a similar physicochemical property to the group IIIB oxide. The method of removing the capping layer includes the steps of: converting the oxide into a chloride and then dissolving the chloride in a solvent. According to the manufacturing method of the transistor, the capping layer covering the carbon nanotubes is formed, the carbon nanotubes are protected from being polluted, the carbon nanotubes are prevented from being damaged physically or chemically in a relevant etchingprocess, and the capping layer is removed under the condition that the carbon nanotubes are not damaged through chlorination and simple dissolution.
Description
technical field [0001] The present disclosure relates to the field of manufacturing nanoelectronic devices, and more particularly, to a transistor and a manufacturing method thereof. Background technique [0002] Carbon Nanotube (CNT) is a one-dimensional quantum material with a special structure. Transistors using carbon nanotubes as conductive channel materials have significant advantages over traditional transistors in terms of extreme performance and energy efficiency. Therefore, carbon nanotube transistors will play an important role in the field of chip manufacturing in the future. [0003] In the prior art, when fabricating the source electrode, the drain electrode and the gate electrode of the carbon nanotube transistor, it is necessary to adopt a lift-off process (for example, reference). [0004] References: Patent Publication No. CN1669160A [0005] In the above-mentioned manufacturing method, the photoresist pollutes the carbon nanotubes, and the organic solut...
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IPC IPC(8): H01L21/336H01L21/02H01L21/28H01L29/786
CPCH01L29/66045H01L21/044H01L21/02192H01L29/78684
Inventor 梁世博
Owner BEIJING HUA TAN YUAN XIN ELECTRONICS TECH CO LTD