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Preparation method of gallium nitride or aluminum nitride nanopores

A technology of nanopores and aluminum nitride, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of high preparation cost, and achieve the effect of high preparation cost, low cost and better appearance

Inactive Publication Date: 2019-10-22
ZHONGYUAN ENGINEERING COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This etching method will lead to more interface defects in the formed nanopores, and it uses a large amount of precious metals, which makes the preparation cost high

Method used

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  • Preparation method of gallium nitride or aluminum nitride nanopores
  • Preparation method of gallium nitride or aluminum nitride nanopores
  • Preparation method of gallium nitride or aluminum nitride nanopores

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0031] A method for preparing GaN nanopores, comprising the following steps:

[0032] 1. Sapphire substrate pretreatment: It is realized by high-temperature baking chamber and nitriding treatment, the purpose is to remove pollutants on the substrate surface, roughen the surface and form growth steps on the surface; the specific control conditions of pretreatment are as follows: The high-temperature baking chamber adopts low-pressure metal-organic chemical vapor deposition (LP-MOCVD) at 100~200Torr, 1000~1200℃ 2 Bake in the atmosphere for 10~15min; the nitriding process is at 500~600℃, the air pressure is 500~600Torr, and NH 3 Nitriding for 3~5min. After nitriding, the surface of the sapphire substrate becomes rough, which facilitates the growth of the subsequent buffer layer;

[0033] In this embodiment, the conditions for high-temperature baking cavity and nitriding treatment are set as follows:

[0034] The high-temperature baking chamber adopts low-pressure metal-organic ...

Embodiment 2

[0055] Except that the raw material TMGa is replaced with TMAl, the rest of the steps are the same as those in Example 1 to obtain AlN nanopores.

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Abstract

The invention provides a preparation method of gallium nitride or aluminum nitride nanopores, which comprises the steps of (1) sequentially growing a GaN or AlN thin film layer on a sapphire substrate; (2) depositing a SiO2 thin film layer; (3) depositing a Ni thin film layer, and annealing the Ni thin film layer, wherein the Ni thin film is self-assembled to form discrete Ni particles during theannealing process of the Ni thin film layer; (4) etching the SiO2 thin film layer, that is, etching the SiO2 thin film layer by taking the Ni particles formed by the self-assembly in the step (3) as amask until the etching surface reaches the GaN or AlN thin film layer; (5) corroding the Ni particles, that is, leaving SiO2 nano-columns on the GaN or AlN thin film layer after removing the Ni particles by corrosion; (6) continuously growing the GaN or AlN thin film layer, wherein the GaN or AlN thin film continues to grow in an epitaxial mode, and the height of the GaN or AlN thin film layer after continuing to grow is not greater than the height of the SiO2 nano-columns; and (7) corroding the SiO2 nano-columns, that is, removing the SiO2 nano-columns by corrosion to obtain the GaN or AlN nanopores. The nanopores formed according to the invention have the advantages of good interface and few defects.

Description

technical field [0001] The invention belongs to the technical field of preparation of gallium nitride or aluminum nitride nanostructures, and in particular relates to a preparation method of gallium nitride or aluminum nitride nanopores. Background technique [0002] Gallium nitride aluminum nitride nano-optoelectronic devices have many excellent properties. The preparation of nanostructures such as nanowires and nanoholes is particularly critical. The preparation process usually requires complex photolithography processes. When faced with nanoscale dimensions, even low efficiency is required And the costly electron beam lithography technology. [0003] Chinese patent CN107978662A is a preparation method of gallium nitride nanoholes, including the following specific steps: [0004] (1) First coat a layer of aluminum nitride on the substrate, then epitaxially layer a layer of gallium nitride on the aluminum nitride layer, and then coat a layer of silicon dioxide on the galli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/16H01L33/18H01L33/32
CPCH01L33/0075H01L33/16H01L33/18H01L33/32
Inventor 闫李柴旭朝焦岳超张梁瞿博阳郭倩倩朱小培李召付凯
Owner ZHONGYUAN ENGINEERING COLLEGE