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Electromigration test structure and method

A technology of test structure and test method, which is applied in the direction of semiconductor/solid-state device test/measurement, circuit, electrical components, etc. It can solve the problems of uniform heating of test metal wires, difficulty in providing target test temperature, etc., and achieve the effect of efficient conduction

Active Publication Date: 2019-10-25
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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Problems solved by technology

[0004] The purpose of the present invention is to provide an electromigration test structure and method to solve the problems in the prior art that it is difficult to provide the target test temperature and the test metal wire cannot be evenly heated when conducting the electromigration test

Method used

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  • Electromigration test structure and method
  • Electromigration test structure and method

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Embodiment Construction

[0040] As mentioned in the background technology, when polysilicon wires are used for electromigration testing, the polysilicon heaters are generally arranged at the bottom layer. Due to the heat insulation effect of the interlayer medium and the dissipation effect of the heat transfer process, the temperature obtained by actually testing the metal wires is different from that of The temperatures produced by the polysilicon heaters are not equal and there will be a significant difference in the temperature at which the top and bottom of the test wires are heated.

[0041] For example, if figure 1 As shown, in the prior art, when a current is applied to the polysilicon wire poly to make the polysilicon wire poly generate a heating temperature of 300°C, due to the heat insulation effect of the interlayer dielectric and the dissipation effect of heat transfer, when reaching the metal test When the bottom of the metal test line is reached, the heating temperature may be reduced to...

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Abstract

The invention provides an electromigration test structure and method. Heat is generated by utilizing a polysilicon heater to provide a temperature for performing an electromigration test on a test metal wire, and the heat generated by the polysilicon heater is conducted to the periphery of the test metal wire by utilizing a heat conduction structure so as to uniformly heat the test metal wire. Compared with the prior art, the heat conduction structure can efficiently conduct the heat generated by the polysilicon heater and can conduct the heat to the periphery of the test metal wire, so that the heating temperatures of different parts of the test metal wire can be consistent with the target heating temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electromigration test structure and method. Background technique [0002] With the advancement of technology nodes, the reliability assessment of electromigration becomes more and more important. Common electromigration tests use packaging-level samples for testing. Specifically, firstly, the wafer is diced, chips are cut and packaged, and a furnace is used to provide high temperature for electromigration testing. The advantage of package-level testing is that a large number of samples can be tested at one time, and the electromigration life can be obtained by statistical analysis. However, the disadvantage of this method is that the utilization rate of the chip is low, and the cutting and packaging process may have an impact on the test structure, as well as the entire The process takes a long time. Another constant thermal electromigration test method can be tested...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/14H01L22/22H01L22/30H01L22/32
Inventor 范庆言曹巍陈雷刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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