Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation

A plasma and equipment technology, applied in the field of plasma-assisted substrate processing, which can solve problems such as large heat load

Inactive Publication Date: 2019-10-25
APPLIED MATERIALS INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A second problem with the prior art is the excessive heat load on the transfer lines to the chamber and wafer carrier substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
  • Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
  • Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Embodiments of methods and apparatus for ion energy enhancement are provided herein. According to one embodiment, an apparatus for processing a substrate, such as a semiconductor wafer, is provided. The apparatus includes a symmetrical VHF plasma source coupled to a top electrode and a bottom electrode coupled to two or more low frequency sources that dissipate the plasma Power in the body sheath (rather than the body plasma). The two or more low frequencies are chosen such that the two or more low frequencies provide sufficient amplitude modulation (e.g., a modulation depth of 0.2 or greater but less than 1) to use the two low frequencies in combination (rather than individually Provides higher peak-to-peak voltage when using low frequencies). A symmetrical VHF plasma source provides a low impedance return path for low frequencies applied to the bottom electrode through the top electrode while the top electrode is RF heated so that one or more VHF frequencies generat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.

Description

technical field [0001] Embodiments disclosed herein relate generally to methods and apparatus for plasma assisted substrate processing techniques. Background technique [0002] In the semiconductor manufacturing industry, the size of etched features on substrates, such as semiconductor wafers, continues to decrease, and transistor structures become increasingly complex. For example, in the case of vertical NAND memory structures, there is a growing trend to form chains of transistors vertically rather than laterally. These vertical structures present their own unique challenges because very high aspect ratio holes must be fabricated to make contacts or deep trenches to route the infrastructure of electrical paths. [0003] Etching of these high aspect ratio holes requires the use of high ion energy in a sufficient power supply (ion flux). It is important that the hole does not bend or twist while etching, and that the hole remains consistent even as the hole gets deeper wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/32
CPCH01J37/32082H01J37/32091H01J37/32165H01J37/32183H01J37/32577H01J37/32697H01J37/32935H01J37/32532H01J37/32715H01J2237/334H01L21/02274H01L21/3065H01L21/32136H01L21/67069H01L21/6831H01L21/6833
Inventor W·李K·拉马斯瓦米A·阿加沃尔王海涛
Owner APPLIED MATERIALS INC