A kind of atomic layer deposition equipment and method
An atomic layer deposition and equipment technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve problems such as low purge gas flow, reduce purge time, increase flow, and save costs Effect
Active Publication Date: 2021-07-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0009] The purpose of the present invention is to provide an atomic layer deposition equipment and method to solve the problems in the prior art that the chamber pressure is constant to form a stable gas flow field and the purge gas flow rate is low during the thin film deposition process
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[0043] The present invention proposes a novel implementation method of the atomic layer deposition process. By increasing the gas flow rate of the purge pipeline, the process of pressure gradient in the purge step is generated to realize the removal of residual precursors and reduce the production of process particles, thereby ensuring the deposition of thin films. the quality of.
[0044] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
[0045] Figure 4 A schematic diagram showing an atomic layer deposition apparatus according to an exe...
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The invention discloses an atomic layer deposition equipment and method. The equipment includes a reaction chamber, a tail gas treatment device, a plurality of transmission pipelines, a plurality of tail gas treatment pipelines, a plurality of purging branches and a plurality of precursor source bottles , wherein, each transfer pipeline is connected to the reaction chamber, so as to selectively pass the corresponding precursor into the reaction chamber; each tail gas treatment pipeline is connected to the tail gas treatment device, and each tail gas treatment tube Each pipeline is connected to a transmission pipeline through a corresponding purge branch; each tail gas treatment pipeline is selectively connected to a tail gas treatment device or a transmission pipeline. The invention increases the purge bypass and increases the flow rate of the purge gas, which can effectively reduce the purge time, improve equipment productivity, and save costs; and adopts the purge mode of the gradual air flow field, which is more conducive to the removal of residual precursors or particles , to avoid process particles and improve film quality.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an atomic layer deposition device and method. Background technique [0002] With the development of semiconductor technology, the feature size of devices is gradually reduced, which puts forward higher requirements on the performance of deposited films, especially in terms of film thickness control and uniformity indicators. Traditional thin film deposition technologies, such as physical vapor deposition (PVD, Physical Vapor Deposition), chemical vapor deposition (CVD, Chemical Vapor Deposition), etc., have increasingly obvious disadvantages in terms of film thickness control and uniformity, especially for Applications with high requirements for step coverage. The thin film prepared by atomic layer deposition (ALD, Atomic Layer Deposition) technology has highly controllable thickness and excellent uniformity, which completely makes up for the shortco...
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IPC IPC(8): C23C16/455C23C16/44
CPCC23C16/4408C23C16/45529
Inventor 赵雷超史小平李春雷秦海丰纪红张文强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD