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Ramp signal generator and CMOS image sensor using the same

An image sensor and slope signal technology, applied in image signal generators, solid image signal generators, image communications, etc., can solve problems such as code errors and code error ranges exceeding acceptable error rates, and minimize code errors Effect

Active Publication Date: 2019-11-01
SK HYNIX INC
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Problems solved by technology

[0005] Also, since the slope of the ramp signal (ramp voltage) has linearity, a code error occurs in the process of finding the position of the pixel signal based on the ramp signal
[0006] The acceptable error rate for code errors is usually around 1%, but those non-linear issues can cause code errors to range beyond the acceptable error rate

Method used

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  • Ramp signal generator and CMOS image sensor using the same
  • Ramp signal generator and CMOS image sensor using the same
  • Ramp signal generator and CMOS image sensor using the same

Examples

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Embodiment Construction

[0025] figure 1 is an example diagram of a CMOS image sensor (CIS) for easy understanding of the disclosed technology, and shows a CMOS image sensor having a column-parallel structure implemented using a general single-slope analog-to-digital converter.

[0026] Such as figure 1 As shown, the CMOS image sensor includes a pixel array 10 of photosensitive pixels arranged in rows and columns to output pixel signals in response to incident light. Each light-sensitive pixel may be implemented by a photodiode, phototransistor, photogate, or other light-sensitive circuitry capable of converting light into a pixel signal (eg, charge, voltage, or current). On top of the photosensitive pixels, an array of different color filters is placed to cover the photosensitive pixels to filter different colors of incident light at different pixel positions to capture color information in the sensed image. figure 1 The specific example in shows the pixel arrangement of color imaging pixels, where...

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Abstract

The invention provides a RAMP signal generator and a CMOS image sensor using the same. Provided are devices having a device including a ramp signal generator which may comprise: a slope control circuit configured to generate a controllable analog reference voltage according to a digital setting code value to control a slope of a ramp signal; and at least one unit current cell configured to adjustthe slope of the ramp signal by adjusting a current flowing through the at least one unit current cell according to the controllable analog reference voltage generated by the slope control circuit.

Description

technical field [0001] The techniques and implementations disclosed in this patent document relate to an analog-to-digital conversion device and a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS). Background technique [0002] In general, an image sensing device includes a pixel for capturing an image using a photodiode (PD) that converts light into electric current and transfers the current to an input as a conversion transistor (source follower transistor) through a transfer transistor. node (gate terminal) of the floating diffusion node. The current delivered to the floating diffusion node can shift the voltage at the output terminal of the conversion transistor, which is called the pixel signal. [0003] For the purpose of quality control of an image sensing device, an exposure linearity test is performed to check the linearity of an analog-to-digital conversion code while increasing the amount of light incident on a photodiode of a pixel. [0004] Non...

Claims

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Application Information

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IPC IPC(8): H04N5/374H04N5/3745H04N5/378
CPCH04N25/76H04N25/77H04N25/75H04N25/671H04N25/709H01L27/14645H04N25/772H04N23/10H04N25/745
Inventor 金贤俊郑会三
Owner SK HYNIX INC
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