Ultra-wideband near-infrared luminescent tellurium cluster-doped glass and preparation method thereof

Abstract

The invention provides an ultra-wideband near-infrared luminescent tellurium cluster-doped glass and a preparation method thereof. The preparation process of the glass is simple, and does not requireany subsequent heat treatment. The glass has near-infrared wideband luminescence covering 700-1600 nm, and the full width at half maximum of luminescence is more than 200 nm. The glass is expected tobe applied in the fields of high-capacity optical fiber communication, wideband tunable fiber lasers and ultra-short pulse lasers.

Description

Technical field [0001] The invention relates to the technical field of luminescent materials, in particular to an ultra-wideband near-infrared luminescent tellurium cluster doped glass and a preparation method. Background technique [0002] Broadband near-infrared luminescent materials, as the core components of tunable lasers and infrared light sources, are crucial to the development of advanced fields such as optical fiber communications, biological imaging and optical sensing. [0003] At present, the gain materials with near-infrared luminescence are mainly glass materials doped with rare earth ions and transition metal ions. The luminescence centers of these gain materials are single isolated active ions, and there is no report about the active center doped glass that gathers polyatoms to form clusters. Summary of the invention [0004] In view of the shortcomings of the prior art, the present invention provides an ultra-wideband near-infrared light-emitting tellurium cluster ...

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Problems solved by technology

The luminescent centers of these gain materials are all single isolated active ions, and there is no report of polyatomic aggregation to form clusters active center doped glass

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