Width measuring method for nano-strip or nano-sheet of semiconductor device

Abstract

The invention discloses a width measuring method for a nano-strip or nano-sheet of a semiconductor device. The method comprises the following steps that 1) a relation curve between temperature changegenerated by a self-heating effect and a self-heating effect index of the nano-strip or nano-sheet is obtained; 2) the tested semiconductor device with the nano-strip or nano-sheet is provided; 3) self-heating effect test is used to test temperature change of the nano-strip or nano-sheet of the tested semiconductor device; and 4) the self-heating effect index of the nano-strip or nano-sheet is obtained according to the temperature change and the relational cover, and further the width of the nano-strip or nano-sheet of the tested semiconductor device is obtained. The method can be used to increase the measurement speed and reduce the test complexity without damage, comprehensive measurement can be realized, multiple samples can be measured, a distribution map can be formed, and the yield electrical connection is high.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for measuring the width of a nano bar or a nano sheet of a semiconductor device. Background technique [0002] Compared with planar transistors, fin transistors (FinFETs) have a three-dimensional channel structure, so they have better on-current and off-current characteristics; they can also improve short-channel effects (SCE), such as reduced drain-induced barriers Both effect (DIBL) and subthreshold slope (SS) were improved. Such as figure 1 As shown, it is a three-dimensional structure diagram of an existing fin transistor; the fin transistor includes a fin body 102 , and the fin body 102 is composed of nano-strips or nano-sheets formed of a semiconductor material formed on a semiconductor substrate 101 . The semiconductor material of the fin body 102 includes silicon or silicon germanium. The fin bodies 102 on the same semiconductor ...

AI Technical Summary

Problems solved by technology

[0007] Because it needs to be sliced, it is destructive; at the same time, the measurement speed is relatively slow; a TEM image can only analyze one side, so it can only test one plane; in addition, the number of samples that can be measured by TEM is also small and the process is complicated ; The connection with the electrical yield rate is also general

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