Width measuring method for nano-strip or nano-sheet of semiconductor device

A measurement method and nano-stripe technology, applied in measurement devices, instruments, etc., can solve the problems of general electrical yield connection, slow measurement speed, and small number of samples, and achieve fast test speed, good yield, and simple test. Effect

Active Publication Date: 2019-11-05
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Application Information

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Problems solved by technology

[0007] Because it needs to be sliced, it is destructive; at the same time, the measurement speed is relatively slow; a TEM image can only analyze one side, so it can only test one plane; in addition, the number of samples that can be measured by TEM is also small and the process is complicated ; The connection with the electrical yield rate is also general

Method used

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  • Width measuring method for nano-strip or nano-sheet of semiconductor device
  • Width measuring method for nano-strip or nano-sheet of semiconductor device
  • Width measuring method for nano-strip or nano-sheet of semiconductor device

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Embodiment Construction

[0033] Such as figure 2 Shown is a flowchart of a method for measuring the width of a nanobar or a nanosheet of a semiconductor device according to an embodiment of the present invention; the method for measuring the width of a nanobar or a nanosheet of a semiconductor device according to an embodiment of the present invention includes the following steps:

[0034] Step 1. Obtain a relationship curve between the temperature change caused by the self-heating effect of the nano-strips or nano-sheets and the self-heating effect index; the self-heating effect index is related to the height and width of the nano-strips or nano-sheets. The self-heating effect index is proportional to the ratio of the height and width of the corresponding nanorods or nanosheets.

[0035] In the embodiment of the present invention, the linear regression model in which the temperature change and the self-heating effect index have a linear relationship is obtained through the relationship curve; the re...

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Abstract

The invention discloses a width measuring method for a nano-strip or nano-sheet of a semiconductor device. The method comprises the following steps that 1) a relation curve between temperature changegenerated by a self-heating effect and a self-heating effect index of the nano-strip or nano-sheet is obtained; 2) the tested semiconductor device with the nano-strip or nano-sheet is provided; 3) self-heating effect test is used to test temperature change of the nano-strip or nano-sheet of the tested semiconductor device; and 4) the self-heating effect index of the nano-strip or nano-sheet is obtained according to the temperature change and the relational cover, and further the width of the nano-strip or nano-sheet of the tested semiconductor device is obtained. The method can be used to increase the measurement speed and reduce the test complexity without damage, comprehensive measurement can be realized, multiple samples can be measured, a distribution map can be formed, and the yield electrical connection is high.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for measuring the width of a nano bar or a nano sheet of a semiconductor device. Background technique [0002] Compared with planar transistors, fin transistors (FinFETs) have a three-dimensional channel structure, so they have better on-current and off-current characteristics; they can also improve short-channel effects (SCE), such as reduced drain-induced barriers Both effect (DIBL) and subthreshold slope (SS) were improved. Such as figure 1 As shown, it is a three-dimensional structure diagram of an existing fin transistor; the fin transistor includes a fin body 102 , and the fin body 102 is composed of nano-strips or nano-sheets formed of a semiconductor material formed on a semiconductor substrate 101 . The semiconductor material of the fin body 102 includes silicon or silicon germanium. The fin bodies 102 on the same semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B21/02
CPCG01B21/02
Inventor 翁文寅
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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