Anti-single-particle burnout structure suitable for power semiconductor device

Abstract

The invention discloses an anti-single-particle burnout structure suitable for a power semiconductor device. The structure comprises an epitaxial layer. A first main surface of the epitaxial layer isprovided with an active area and a gate structure, and gate metal layers are arranged on the active area and the gate structure. A substrate layer is arranged on a second main surface of the epitaxiallayer, and a drain metal layer is arranged on the substrate layer. The epitaxial layer between the active area and the substrate layer forms a drift area. The active area is provided with a longitudinal deep groove, and the longitudinal deep groove is provided with a source metal layer. A P-type area is arranged at a bottom of the source metal layer. When the device is closed, a transient currentcaused by heavy ions is mainly discharged through a deep groove electrode, which greatly reduces the transient current acting on parasitic BJT, therefore, the parasitic BJT is difficult to conduct and anti-SEB performance of the power semiconductor device is effectively improved. Introduction of the deep groove electrodes does not affect a device channel area and a reverse voltage withstanding area so that a basic electrical characteristic of the device is not affected.

Description

technical field [0001] The invention relates to the anti-radiation strengthening technology of power semiconductor devices, in particular to an anti-single event burning structure suitable for power semiconductor devices. Background technique [0002] Power semiconductor devices have the advantages of large driving current, high breakdown voltage, fast speed, low power consumption, and large output power. They can realize power control and conversion in different ranges, and are widely used in power management of satellites and spacecraft. The field of application has enormous potential for development. Power semiconductor devices usually have the characteristics of small size and high operating voltage, and their working stability is easily affected by the natural radiation environment in space, especially the single event burnout (SEB) effect. SEB is usually induced by the radiation of heavy ions, which can generate a very high concentration of electron-hole pairs along t...

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the deficiency that the existing semiconductor power device SEB reinforcement technology cannot guarantee the basic electrical characteristics of the device, the present invention provides an anti-single event burnout structure suitable for power semiconductor devices to solve the above-mentioned existing problems in the prior art. Under the premise of ensuring the basic electrical characteristics of semiconductor power devices, effectively improve the anti-SEB performance of the device

Images