Novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and preparation method thereof

A surface-enhanced Raman and gallium telluride technology, used in Raman scattering, measuring devices, instruments, etc.

Inactive Publication Date: 2019-11-12
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the main advantage of the two-dimensional material SERS substrate lies in the improvement of uniformity, stability, and repeatability, and it is not better than the traditional substrate in terms of the balance between the key detection performance and cost.

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  • Novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and preparation method thereof
  • Novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and preparation method thereof
  • Novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and preparation method thereof

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Embodiment Construction

[0019] The invention discloses a novel GaTe-based surface-enhanced Raman substrate, and the device structure is SiO from bottom to top. 2 / Si base layer, Ti layer, Au layer 1, two-dimensional thin GaTe layer 2 and Au nanoparticle layer, two-dimensional thin GaTe layer 2 is 3-10nm, two-dimensional thin GaTe layer 2 and Au layer 1 are formed Heterostructure, a two-dimensional thin GaTe layer 2 self-assembled to form a layer of Au nanoparticles.

[0020] The brief preparation steps of the present invention are as follows:

[0021] 1) On SiO 2 / Grow a Ti or Cr layer on the Si base layer, and then grow an Au layer 1;

[0022] 2) Preparation of thin-layer GaTe two-dimensional materials;

[0023] 3) transferring the prepared two-dimensional thin GaTe layer 2 onto the Au layer 1;

[0024] 4) Prepare gold particles on the two-dimensional thin GaTe layer 2 to form an Au nanoparticle layer.

[0025] Below in conjunction with the accompanying drawings of the description, the technica...

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Abstract

The invention discloses a novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and a preparation method thereof. A substrate structure is, in order from a bottom to a top, an Au layer,a two-dimensional thin layer GaTe layer and an Au nanoparticle layer. A heterostructure is formed by the two-dimensional thin layer GaTe layer and the Au layer. The preparation method comprises: growing a Ti layer and the Au layer on a SiO<2> /Si substrate layer through a thermal evaporation method, using a mechanical peeling method to prepare the two-dimensional thin layer GaTe layer, using a transfer platform to transfer the same onto the Au layer, and finally, immersing the substrate in an HAuCl<4> solution to prepare the Au nanoparticle layer. The substrate is benefited from higher defectdensity of GaTe material, a coverage rate of gold nanoparticles formed by self-assembly on the two-dimensional thin layer GaTe layer can reach 98%, and thus very strong local surface plasmons can begenerated among the gold particles. At the same time, a gold layer under the two-dimensional thin layer GaTe layer can also generate surface plasmons under illumination, strength of an electromagneticfield among the gold nanoparticles is enhanced, and a Raman enhancement effect is greatly improved.

Description

technical field [0001] The patent of the present invention relates to a novel gallium telluride-based surface-enhanced Raman substrate and its preparation method. Background technique [0002] Raman spectroscopy is a fingerprint technique that can effectively detect molecular vibration information. But in general, the intensity of Raman signal is very weak, which affects the detection effect of trace molecules. The surface-enhanced Raman (SERS) technology can effectively enhance the Raman signal, and the amplitude can reach 10 orders of magnitude, so it is widely used in the fields of chemistry and biology. In surface-enhanced Raman technology, the preparation of the substrate is one of the core issues. An ideal SERS substrate needs to meet various requirements, including detection performance, uniformity, stability, repeatability and economy. However, the current SERS substrates cannot meet these requirements well at the same time: substrates with disordered structures, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00G01N21/658
Inventor 吴惠桢鲁鹏棋王垚
Owner ZHEJIANG UNIV
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