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Three-dimensional memory and method of forming the same

A memory, three-dimensional technology, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of high manufacturing cost and poor performance of three-dimensional memory, and achieve the effect of improving performance, reducing the number of etchings, and improving deformation.

Active Publication Date: 2020-05-19
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention provides a three-dimensional memory and its manufacturing method, which are used to solve the problems of high manufacturing cost and poor performance of the existing three-dimensional memory

Method used

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  • Three-dimensional memory and method of forming the same
  • Three-dimensional memory and method of forming the same

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Embodiment Construction

[0039] The specific implementation of the three-dimensional memory provided by the present invention and its forming method will be described in detail below in conjunction with the accompanying drawings.

[0040] A three-dimensional memory generally includes a substrate and a stacked layer on the substrate, and the stacked layer includes a core area and a stepped area surrounding the core area. The core area is used for storing information; the stepped area is located at the end of the stack layer, and is used for transmitting control information to the core area, so as to realize reading and writing of information in the core area.

[0041] The traditional ladder area is a one-way ladder structure. However, as the number of stacked layers in the three-dimensional memory continues to increase, the unidirectional step structure will lead to an increase in the area of ​​the step region and a sharp increase in manufacturing cost. Based on this, the Staircase Divide Scheme (SDS)...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory and a forming method thereof. The forming method of the three-dimensional memory includes the following steps: providing a substrate with a stacked layer on the substrate, the stacked layer including a core area and a stepped area located at the periphery of the core area; The stepped area; forming a plurality of sub-regions arranged along the first direction in the partitioned stepped structure region, each of the sub-regions includes a plurality of sub-structures arranged in a step-like manner along the first direction, and each of the The substructures are multi-level ladders arranged along the second direction, and the heights of the steps in any two sub-regions are different. The invention simplifies the manufacturing process of the three-dimensional memory, reduces the manufacturing cost of the three-dimensional memory, and simultaneously realizes the improvement of the performance of the three-dimensional memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory and a forming method thereof. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] Among them, 3D NAND memory takes its small size and large capacity as the starting point, and the design concept of highly integrated storage units stacked in three-dimensional mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/11548H01L27/11556H01L27/11575H01L27/11582H10B69/00H10B41/27H10B41/50H10B43/27H10B43/50
CPCH10B69/00H10B41/50H10B41/27H10B43/50H10B43/27
Inventor 李治昊夏志良周文犀张帜张中
Owner YANGTZE MEMORY TECH CO LTD
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