Evaluation method for quality of high-purity silicon carbide powder

Abstract

The invention discloses an evaluation method for quality of high-purity silicon carbide powder. The evaluation method comprises the following steps: taking the high-purity silicon carbide powder, measuring a brightness value L* and a chromaticity value a* and b* by a color measuring device; plugging the obtained L* value, a* value and b* value into a formula shown in the description to calculate aquality factor Delta. The evaluation method of the invention creatively constructs a calculation formula of the quality factor according to difference on apparent color of the silicon carbide powdercaused by various impurities in the high-purity silicon carbide powder based on a principle of spectrophotometric color measurement, comprehensively reflects contents of impurities including N, Al andB in the silicon carbide powder and content of carbon inclusion and can analyze the level of nitrogen content in the silicon carbide powder in a semiquantitative way. The higher quality factor indicates the better quality of the silicon carbide powder. While the a* value is close to zero, the nitrogen content is lower. The quality factor provided by the invention and the measured a* value can rapidly and effectively evaluate and classify the quality and nitrogen content of the high-purity silicon carbide powder.

Description

technical field [0001] The invention relates to the technical field of silicon carbide inspection, in particular to a method for evaluating the quality of high-purity silicon carbide powder. Background technique [0002] As the most mature wide-bandgap semiconductor material, it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. In particular, semi-insulating silicon carbide substrates are widely used in the field of microwave devices. The "semi-insulating" refers to the resistivity at room temperature greater than 10 5 Ω·cm. Transistors fabricated from semi-insulating silicon carbide are capable of generating more than five times the power density of GaAs microwave components at frequencies up to 10 GHz. Therefore, the manufacture of semi-insulating silicon carbide substrates with high crystalline quality can produce high-performance microwave devices, which can be used in communication devices such as cellular phones an...

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Problems solved by technology

[0004] Aiming at the problems that the existing high-purity silicon carbide powder quality evaluation method cannot comprehensively reflect the true quality of silicon carbide raw materials, and the measurement cost is high and the measurement period is long, the present invention provides a high-purity silicon carbide powder quality evaluation method

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