Evaluation method for quality of high-purity silicon carbide powder
A technology of high-purity silicon carbide powder and high-purity silicon carbide, which is applied to the analysis of materials, material analysis through optical means, and measurement devices, etc., can solve the problem of inability to comprehensively reflect the true quality of silicon carbide raw materials, high measurement costs, and long measurement cycles. and other problems, to achieve the effect of fast and effective test results, timely adjustment, and improvement of synthesis process
Active Publication Date: 2019-11-15
HEBEI POSHING ELECTRONICS TECH
View PDF5 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Aiming at the problems that the existing high-purity silicon carbide powder quality evaluation method cannot comprehensively reflect the true quality of silicon carbide raw materials, and the measurement cost is high and the measurement period is long, the present invention provides a high-purity silicon carbide powder quality evaluation method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0024] In the actual application of synthetic silicon carbide powder, the powder in different parts of the same furnace and the powder in the same part of different furnaces are taken for measurement, and the quality coefficient is calculated according to the lightness value and chromaticity value, and the quality control is carried out according to the quality factor , according to the change of quality coefficient, the process of synthetic powder should be adjusted appropriately.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses an evaluation method for quality of high-purity silicon carbide powder. The evaluation method comprises the following steps: taking the high-purity silicon carbide powder, measuring a brightness value L* and a chromaticity value a* and b* by a color measuring device; plugging the obtained L* value, a* value and b* value into a formula shown in the description to calculate aquality factor Delta. The evaluation method of the invention creatively constructs a calculation formula of the quality factor according to difference on apparent color of the silicon carbide powdercaused by various impurities in the high-purity silicon carbide powder based on a principle of spectrophotometric color measurement, comprehensively reflects contents of impurities including N, Al andB in the silicon carbide powder and content of carbon inclusion and can analyze the level of nitrogen content in the silicon carbide powder in a semiquantitative way. The higher quality factor indicates the better quality of the silicon carbide powder. While the a* value is close to zero, the nitrogen content is lower. The quality factor provided by the invention and the measured a* value can rapidly and effectively evaluate and classify the quality and nitrogen content of the high-purity silicon carbide powder.
Description
technical field [0001] The invention relates to the technical field of silicon carbide inspection, in particular to a method for evaluating the quality of high-purity silicon carbide powder. Background technique [0002] As the most mature wide-bandgap semiconductor material, it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. In particular, semi-insulating silicon carbide substrates are widely used in the field of microwave devices. The "semi-insulating" refers to the resistivity at room temperature greater than 10 5 Ω·cm. Transistors fabricated from semi-insulating silicon carbide are capable of generating more than five times the power density of GaAs microwave components at frequencies up to 10 GHz. Therefore, the manufacture of semi-insulating silicon carbide substrates with high crystalline quality can produce high-performance microwave devices, which can be used in communication devices such as cellular phones an...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31G01N21/01
CPCG01N21/01G01N21/31
Inventor 王建江王毅高卫李召永赵丽霞吴会旺陈秉克
Owner HEBEI POSHING ELECTRONICS TECH