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Optical detector based on photothermoelectric effect

A photodetector and photothermoelectric technology, applied in the field of photodetection, can solve problems such as low sensitivity and achieve the effect of improving sensitivity

Inactive Publication Date: 2019-11-19
金华伏安光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the sensitivity of traditional detection methods is low

Method used

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  • Optical detector based on photothermoelectric effect
  • Optical detector based on photothermoelectric effect
  • Optical detector based on photothermoelectric effect

Examples

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Embodiment 1

[0021] The present invention provides a figure 1 The shown photodetector based on the photopyroelectric effect includes a substrate 1, a pyroelectric material layer 2, and an electrode 3. The pyroelectric material layer 2 and the electrode 3 are arranged on the substrate 1, and the two ends of the pyroelectric material layer 2 are connected to the electrode 3. A phase-change material layer 4 is arranged on either end of the material layer 2 , and a microstructure layer 5 is also arranged on the phase-change material layer 4 . The material of thermoelectric material layer 4 is Bi 2 Te 3 or SbTe 3 . When performing photodetection, light is irradiated on the microstructure layer 5 , the microstructure layer 5 absorbs the light and converts it into heat, and the heat is conducted to one end of the thermoelectric material layer 2 through the phase change material layer 4 . Since the two ends of the thermoelectric material layer 2 have different temperatures, different potential...

Embodiment 2

[0024] On the basis of Example 1, the microstructure layer 5 is a noble metal film with holes 6 . figure 2 A noble metal thin film with a rectangular hole 6 is given, and the rectangular hole 6 is beneficial to detect the electromotive force corresponding to different polarized incident light. In addition, the holes 6 can also be in other shapes such as circles and squares. The arrangement cycle can be a square cycle or a rectangular cycle. The rectangular period corresponds to an anisotropic structure, enabling the identification of the polarization direction of the incident light. Additionally, if image 3 As shown, the holes 6 on the noble metal film can also be dimers. The two holes 6 have different sizes and are arranged asymmetrically to form a chiral structure. In this way, not only different polarization states of polarized light but also different polarization states of circularly polarized light can be identified, because for The film absorbs differently for lef...

Embodiment 3

[0026] On the basis of Example 1, the noble metal nanoparticles are embedded in the phase change material layer 4, and the noble metal nanoparticles can be partially embedded in the phase change material layer 4, or the entire particles can be embedded in the phase change material layer 4, but if the entire When the particles are embedded in the phase-change material layer 4, they should not be embedded too deeply, and it should be ensured that the incident light can be coupled into the noble metal nanoparticles. This is beneficial to conduct the heat generated by the noble metal particles absorbing light into the phase-change material layer 4 to prevent heat loss and improve detection sensitivity. In addition, it may also be that some noble metal nanoparticles are embedded in the phase change material layer 4 , while other part of the noble metal nanoparticles are not embedded in the phase change material layer 4 . In this way, adjacent noble metal nanoparticles with differen...

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Abstract

The invention relates to an optical detector based on a photothermoelectric effect. The optical detector includes a substrate, a thermoelectric material layer, and an electrode. The thermoelectric material layer and the electrode are arranged on the substrate. The two ends of the thermoelectric material layer are connected to the electrode. A phase change material layer is disposed on either end of the thermoelectric material layer. A microstructure layer is also disposed on the phase change material layer. The microstructure layer is configured to absorb light and convert the light into heat.The heat is conducted to the thermoelectric material layer through the phase change material layer. Since the thermal conductivity or light absorption of the phase change material layer depends heavily on temperature, a potential difference measured between the two ends of the thermoelectric material layer depends more heavily on the light absorbed by the microstructure layer. The cascaded amplification effect improves the sensitivity of light detection.

Description

technical field [0001] The invention relates to the field of photodetection, in particular to a photodetector based on the photopyroelectric effect. Background technique [0002] The thermoelectric effect means that when the semiconductor is at different temperatures, the carriers in the semiconductor move from the high temperature region to the low temperature region with the temperature gradient, resulting in charge accumulation and potential difference. After the substance absorbs light, it converts the energy into heat; the thermal signal can be converted into an electrical signal through the thermoelectric material to realize light detection. However, the sensitivity of traditional detection methods is low. Contents of the invention [0003] In order to solve the above problems, the present invention provides a photodetector based on the photopyroelectric effect, the detector includes a substrate, a pyroelectric material layer, and an electrode, the pyroelectric mate...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/18H01L35/02
CPCH10N10/80H10N10/852H10N10/853
Inventor 不公告发明人
Owner 金华伏安光电科技有限公司
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