System and method for high-pressure start-up of reduction furnace

Abstract

The invention provides a reduction furnace high-voltage starting system. A 12-rod-pair power adjusting cabinet and a 24-rod-pair high-voltage starting system are connected to a silicon core of a reduction furnace through a separation switching cabinet respectively. After the 24-rod-pair high-voltage starting system is connected with a single-phase silicon core under switching by the separation switching cabinet, the 24-rod-pair high-voltage starting system is used for applying a breakdown voltage to the single-phase silicon core until breakdown of the single-phase silicon core. The 12-rod-pairpower adjusting cabinet is used for connection with the single-phase silicon core in preset time after breakdown of the silicon core and under switching by the separation switching cabinet, and is used for applying a preset voltage to the silicon core to keep the silicon core in a conducting state. The 12-rod-pair power adjusting cabinet, the separation switching cabinets and the 24-rod-pair high-voltage starting system cooperate with each other to perform high-voltage breakdown and switching of a next single-phase silicon core until silicon cores in three phases are all connected to the 12-rod-pair power adjusting cabinet. Correspondingly, a high-voltage starting method for the reduction furnace high-voltage starting system is provided. The reduction furnace high-voltage starting systemand method can ensure rapid breakdown of the silicon cores and do not damage elements of the 12-rod-pair power adjusting cabinet.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a high-voltage start-up system for a reduction furnace and a corresponding high-voltage start-up method. Background technique [0002] The polysilicon reduction furnace must break down the silicon core before the normal growth of the silicon core, so that the silicon core of the semiconductor becomes a conductor. [0003] There are two existing methods of breaking down silicon cores: [0004] The first is to use a halogen lamp heater to heat the silicon core in the furnace by thermal radiation. When the temperature of the silicon core in the furnace reaches about 600°C, the silicon core is in a conduction state, and then directly enters the growth process of the silicon core. [0005] At present, due to the shortcomings of halogen lamp heaters such as long heating time, serious pollution to silicon core, and heavy manual workload, etc., they have been gradually el...

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Problems solved by technology

[0008] The maximum output current of the 12-pair rod power adjustment cabinet is 3200A, the maximum withstand voltage is 1600V, and the silicon core breakdown voltage is above 6000V. If a high-voltage starting power supply is directly added to the original 12-pair rod reduction furnace electrical system, the 12 The components of the rod power regulating cabinet are subjected to high voltage and are damaged by breakdown; but if there is no high-voltage starting power supply, it is impossible to apply high voltage to the silicon core, and the 12 pairs of rod power regulating cabinets are loaded to the single pair of silicon cores through parallel mode output. The voltage is only about 800V, and the voltage loaded to a single pair of silicon cores in series mode is 400V, which has no breakdown effect on the silicon cores

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