Tail growth method capable of improving success rate of tail growth for single crystal furnace

Abstract

The invention provides a tail growth method capable of improving the success rate of tail growth for a single crystal furnace, and belongs to the technical field of single crystal silicon production.The method comprises the following steps: a temperature is set, tail growth is started, in the initial stage of tail growth, crucible rise is calculated and set according to a ratio of a crucible rising speed to a crystal pulling speed, after tail growth is completed, a first tail growth crystal rod is obtained, equal-distance lineation is performed at the tail part of the first tail growth crystal rod, a first tail growth coordinate spectrum graph is obtained, the first tail growth crystal rod is put on the first tail growth coordinate spectrum graph, a temperature and a pull speed are adjusted according to fast or slow trend of tail growth, the operation is repeated for several times, and therefore the tail growth process without human intervention can be obtained by adjustment. The method provided by the invention obviously improves the success rate of tail growth, human intervention is not needed in the tail growth process, so that the operation intensity of works is reduced; and more importantly, parameter data obtained by using the method overcome influence of external factors, and have better tail growth effects on a same batch of single crystal silicon rods, and at the sametime, the obtained single crystal silicon rods have tail parts with smooth transition, regular shapes and reduced stress, and are not easy to damage.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon production, and in particular relates to a finishing method for a single crystal furnace capable of improving the success rate of finishing. Background technique [0002] In the process of producing single crystal silicon ingots using a Czochralski single crystal furnace, after the equal diameter growth of the crystal is completed, if the crystal is separated from the melt immediately, dislocations and slip lines will be generated in the crystal due to thermal stress, and the crystal will extend Extending upwards, the extension length can reach one diameter of the crystal. In order to avoid this situation, the diameter of the crystal must be gradually reduced until it shrinks and is separated from the liquid surface. This process is the end. [0003] In the actual finishing process, the speed and temperature are regulated by the control system of the crystal pulling furnace. After ...

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Problems solved by technology

[0005] In view of this, the present invention provides a single crystal furnace finishing method that can improve the success rate of finishing, so as to solve the problem in the prior art that the tail of the single crystal silicon rod is irregular in shape, has a large stress, is easy to break, and affects the success of finishing rate technical issues

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