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Silicon-based self-adaptive gushing-type microfluid heat dissipation substrate and preparation method thereof

A heat-dissipating substrate and self-adaptive technology, applied in the field of microelectronics and micro-systems, can solve the problems of surge in flow resistance, poor process compatibility, inability to integrate chip heat dissipation, etc., and achieve the effect of high heat dissipation efficiency and simple heat dissipation

Active Publication Date: 2019-12-03
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional heat dissipation uses fluid circulating at the bottom of the chip to dissipate heat from the chip, which has a stable large-area heat dissipation effect, but has a high demand for fluid flow; two-phase heat dissipation refers to the vaporization of liquid fluid to form a two-phase flow when cooling the chip, which has high heat dissipation efficiency. At the same time, vaporization will also lead to a sharp increase in local flow resistance; jet cooling has a distributed nozzle structure, which is aimed at direct cooling of local hot spots on the chip, and has higher heat dissipation efficiency, but the microfluidic structure is complex
The heat dissipation efficiency of the above three types of microfluidic heat dissipation is gradually improved, and it belongs to the chip-level external embedded microfluidic heat dissipation module. The process compatibility for microsystem integration is poor, and it is not easy to integrate in the system. For the three-dimensional stacked microsystem In other words, it is impossible to directly dissipate heat from the integrated chip

Method used

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  • Silicon-based self-adaptive gushing-type microfluid heat dissipation substrate and preparation method thereof
  • Silicon-based self-adaptive gushing-type microfluid heat dissipation substrate and preparation method thereof
  • Silicon-based self-adaptive gushing-type microfluid heat dissipation substrate and preparation method thereof

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Embodiment

[0047] as attached figure 1 - attached Figure 11 As shown, a silicon-based self-adaptive gushing microfluidic heat dissipation substrate is formed by stacking a three-layer structure, and a support layer 1, a bottom microfluidic structure layer 2 and a top microfluidic structure layer 3 are sequentially arranged from bottom to top, and includes Four kinds of fluid channel structures: liquid port, liquid outlet, microfluidic channel and gushing port; the support layer 1 is provided with a liquid inlet 11 and the support layer liquid outlet 12; the bottom microfluidic structure layer 2 is provided with a bottom microfluidic channel 21 , the bottom spout 22 and the bottom liquid outlet 23; the top microfluidic structure layer 3 is provided with the top microfluidic channel 31 and the top spout 32; the projections of the bottom spout 22 and the top spout 32 on the longitudinal plane of the heat dissipation substrate overlap, And it is distributed in the central area of ​​the hea...

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Abstract

The invention relates to a silicon-based self-adaptive gushing-type microfluid heat dissipation substrate and a preparation method thereof. The heat dissipation substrate is formed by stacking three layers of structures, and a support layer, a bottom microfluid structure layer and a top microfluid structure layer are sequentially arranged from bottom to top; a liquid inlet and a support layer liquid outlet are formed in the support layer; a bottom-layer microfluid channel, a bottom-layer gushing opening and a bottom-layer liquid outlet are formed in the bottom-layer microfluid structure layer;a top-layer microfluid channel and a top-layer gushing opening are formed in the top-layer microfluid structure layer; the bottom-layer microfluid channel and the top-layer microfluid channel are respectively positioned on the lower surface of the bottom-layer microfluid structure layer or the top-layer microfluid structure layer; the position of the liquid inlet corresponds to the end part of the bottom-layer microfluid channel; and the positions of the support layer liquid outlet and the bottom-layer liquid outlet correspond to the end part of the top-layer microfluid channel. In view of the integration requirement of a micro-system, the integration problem of a microfluid heat dissipation module in the system is solved, and the heat dissipation efficiency is effectively improved for local hot spots.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and microsystems, and in particular relates to a silicon-based self-adaptive gushing microfluid heat dissipation substrate and a preparation method thereof. Background technique [0002] With the development of microelectronics and microsystem integration technology, the integration density of chips and modules is getting higher and higher, and microsystem integration is developing in the direction of small volume, high density, high performance, multi-functionality and three-dimensional stacking. Thermal management puts higher demands on it. The quality of thermal management performance will directly affect the service life, performance and reliability of the microsystem. Especially in a system with high power density chip integration, the corresponding area of ​​the chip will form a local hot spot with high density and extremely small area. If the heat cannot be effectively dissipated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/473B81B1/00B81B7/04B81C1/00
CPCB81B1/002B81B7/04B81B2201/05B81B2203/0353B81C1/00055B81C1/00087B81C1/00309B81C1/00523H01L21/4882H01L23/4735
Inventor 禹淼黄旼张洪泽吴静朱健
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD