Epitaxial growth device and epitaxial growth method

Abstract

The invention provides an epitaxial growth device and an epitaxial growth method. The cavity of the epitaxial growth device is provided with a first air inlet and a second air inlet, wherein the firstair inlet allows a reactive gas used for forming an epitaxial layer on a wafer to enter the cavity, and the second air inlet allows an etching gas used for preventing deposition of the epitaxial layer to enter the cavity; when the edge part of the wafer has a faster area and a slower area with different crystal orientations and the epitaxial layer grows faster in the faster area than in the slower area, along with rotation of the wafer in the epitaxial process, the air inlet rate of the etching gas provided by the second air inlet when the second air inlet rotates past the faster area is higher than that of the etching gas provided by the second air inlet when the second air inlet rotates past the slower area, so that the etching gas has higher removal efficiency for the epitaxial layer of the faster area, the epitaxial growth of the faster area and the slower area can be adjusted, the thickness uniformity of the epitaxial layer is improved, the local straightness is reduced, and thequality of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the field of epitaxial growth technology, in particular to an epitaxial growth device and an epitaxial growth method. Background technique [0002] The manufacturing of electronic components has high requirements on the flatness of the upper surface of the semiconductor wafer as the substrate. Now the local flatness SFQR (least squares of the reference of the upper surface of the part) is commonly used to take into account the focusing ability of the stepping device in all areas of the wafer surface square / range) parameters to evaluate. Maximum local flatness SFQR max The value of represents the maximum SFQR value of all electronic components considered on the semiconductor wafer. QUR max The reduction of the value is beneficial to solve the problem of defocusing of the photolithography process that may be encountered in the manufacture of electronic devices, the problem of polishing uniformity in the CMP process, and the pr...

AI Technical Summary

Problems solved by technology

However, adjusting the structure of the epitaxial growth device needs to consider the impact on the various functional components of the device, which is relatively complicated. Moreover, for the device in use, its structure is difficult to adjust in time according to the actual process conditions, and the flexibility is poor.

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