Film forming equipment

A film-forming equipment and film-forming chamber technology, which is applied in ion implantation plating, coating, metal material coating process, etc. sexual effect

Inactive Publication Date: 2017-11-14
北京芯微诺达科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the material source will gradually be consumed and thinned in the long-term production process, and the consumption degree of each position of the material source is not the same, which is easy to cause the thickness of the film layer to be consistent and uniform after the material source has been used for a period of time. sex cannot be guaranteed

Method used

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Embodiment 1

[0024] Embodiment 1: as figure 1 As shown, the present embodiment provides a film forming device, which includes a housing 1 , and the inside of the housing 1 is a film forming chamber 2 . The upper part of the film forming chamber 2 is provided with a target material 3 , the cross section of the target material 3 is preferably larger than the cross section of the workpiece, so as to improve the uniformity of the film layer. The target 3 is connected with a sputtering source 4, and the sputtering source 4 can be selected as a microwave generator, a radio frequency generator or a DC power supply, and different types of sputtering sources 4 need to be selected according to different film-forming methods. The lower part of the film forming chamber 2 is provided with a workbench 5 for placing workpieces, and inside the workbench 5 is provided with a heating device 6, which is preferably a resistance heater. The workbench 5 is driven to move up and down by an electric push rod 7 ,...

Embodiment 2

[0028] Embodiment 2: as figure 2 As shown, the working process and technical effect of this embodiment and embodiment 1 are the same, the difference between this embodiment and embodiment 1 is: the top of the film forming chamber is provided with an evaporation source 13, and the evaporation source 13 adopts thermal evaporation or electron beam evaporation The workbench 5 is driven to move up and down by a linear motion mechanism, the linear motion mechanism includes a servo motor 10, a drive gear 11 and a rack 12, the servo motor 10 is arranged on the housing 1, and the drive gear 11 is arranged on the drive shaft of the servo motor 10 Above, the rack 12 is arranged on the workbench 5, and the driving gear 11 is meshed with the rack 12.

[0029] It should be noted that conventional film forming equipment only controls the thickness and uniformity of the film deposited on the workpiece by controlling the pressure, gas, temperature and time in the film forming chamber 2 . How...

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PUM

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Abstract

The invention discloses film forming equipment. The film forming equipment comprises a shell; the internal of the shell is a film forming chamber; a material source to be grown is arranged at the upper part or the lower part of the film forming chamber; a worktable for placing workpieces is arranged at the lower part or the upper part of the film forming chamber; heating equipment is arranged in the worktable; the worktable is driven to move up and down by a linear motion mechanism; and the linear motion mechanism is controlled by a controller. The film forming equipment can return and adjust gaps from the material source to the workpieces, and can guarantee the thickness consistency and uniformity of film layers on the surfaces of the workpieces and the physical property adjustability of the film layers.

Description

technical field [0001] The invention relates to the technical field of physical vapor deposition, in particular to a film forming device. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, referred to as PVD) refers to the use of physical processes to achieve material transfer, the process of transferring atoms or molecules from the material source to be grown to the surface of the workpiece. Its function is to spray some particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance, etc.) on the workpiece with lower performance, so that the workpiece has better performance. [0003] Plasma Enhanced Chemical Vapor Deposition (PECVD for short) uses microwave or radio frequency to make the gas containing the constituent atoms of the film locally form a plasma, and the plasma is chemically active and easy to react. The desired film can be deposited on the substrate. [0004] Conventional film forming...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/50C23C14/54C23C14/34C23C14/26C23C14/30
CPCC23C14/50C23C14/26C23C14/30C23C14/34C23C14/547
Inventor 卢艳
Owner 北京芯微诺达科技有限公司
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