Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving residual water defect on surface of wafer in immersion lithography process

An immersion lithography and wafer technology, which is applied in microlithography exposure equipment, photolithography process of pattern surface, photolithography process exposure device, etc., can solve problems affecting lithography quality, etc. , improve the yield, eliminate the effect of the impact

Active Publication Date: 2019-12-20
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a method for improving residual water defects on the wafer surface in an immersion photolithography process, so as to solve the problem that the residual water defects on the wafer surface affect the quality of photolithography

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving residual water defect on surface of wafer in immersion lithography process
  • Method for improving residual water defect on surface of wafer in immersion lithography process
  • Method for improving residual water defect on surface of wafer in immersion lithography process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention is described in detail below in conjunction with accompanying drawing:

[0019] figure 1 It is a flowchart of a method for improving residual water defects on a wafer surface in an immersion photolithography process according to Embodiment 1 of the present invention. Please refer to figure 1 , Embodiment 1 of the present invention provides a method for improving residual water defects on the wafer surface in an immersion photolithography process, including:

[0020] Step 101, determining the position distribution of residual water defects on the wafer surface;

[0021] Step 102, according to the position distribution of residual water defects on the wafer surface, set a virtual exposure unit in the corresponding exposure unit, change the exposure path through the virtual exposure unit, and contact the ultrapure water carried by the immersion head with the residual water on the wafer surface , to remove the residual water on the wafer surface.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for improving a residual water defect on the surface of a wafer in an immersion lithography process. The method comprises a step of determining the position distribution of the residual water defect on the surface of the wafer, and a step of setting a virtual exposure unit in a corresponding exposure unit according to the position distribution of the residual waterdefect on the surface of the wafer, changing an exposure path through the virtual exposure unit, enabling ultrapure water carried by an immersion head to be in contact with the residual water on the surface of the wafer, and removing the residual water on the surface of the wafer. According to the method, the residual water on the surface of the wafer can be removed, the probability of the generation of the residual water defect is reduced, the influence of the residual water defect on the surface of the wafer on the photoetching quality is eliminated, the photoetching quality of the wafer isensured, and the yield of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving residual water defects on a wafer surface in an immersion photolithography process. Background technique [0002] Photolithography is a key process for semiconductor integrated circuit chips. In the photolithography process, as the feature size continues to shrink, the impact of defects on device yield becomes more and more obvious. When immersion lithography technology is applied to the production and manufacture of large-scale semiconductor integrated circuit chips, the problem of defects has always been unavoidable. Generally speaking, the probability of wafer surface defects in the non-optimized 193nm immersion lithography process is 4-20% higher than that in the non-immersion lithography process. This is mainly due to the defects unique to the immersion lithography process, such as residual water defects generated during the exposure process, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2041G03F7/70341G03F7/7065G03F7/70908
Inventor 高松王建涛杨正凯
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com