Artificial nerve synaptic device and preparation method thereof
A technology of synaptic devices and artificial nerves, applied in the field of bionic electronics, can solve problems such as inability to simultaneously realize associative learning-related characteristics, complex circuit structure, and complex input signals
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[0039] Example 1
[0040] This embodiment provides an artificial nerve synapse device, figure 1 Schematic diagram of the structure of the artificial nerve synapse device, the artificial nerve synapse device includes a first electrode layer 11, a second electrode layer 13, and a layer disposed between the first electrode layer 11 and the second electrode layer 13. between functional layers 12.
[0041] Specifically, the first electrode layer 11 is used as a bottom electrode, and the material thereof may be an inert conductive material such as Pd, Pt, ITO, W, or Au. Further, the thickness of the first electrode layer 11 is 10 nanometers to 200 nanometers.
[0042] The resistive switching device prepared based on the material of the functional layer 12 has both unidirectional resistive switching characteristics and bidirectional resistive switching characteristics. Unidirectional resistive characteristics, also known as unipolar resistive behavior, means that resistive behavio...
Example Embodiment
[0048] Example 2
[0049] Based on the same inventive concept, this embodiment provides a method for manufacturing the artificial neural synapse device provided in Embodiment 1 by plane integration, and the manufacturing method for the artificial neural synapse device includes steps S11 to S15.
[0050] S11, providing a semiconductor substrate.
[0051] like Figure 8a As shown, the semiconductor substrate 81 may be a silicon substrate.
[0052] S12, depositing an isolation layer on the surface of the semiconductor substrate.
[0053] like Figure 8b As shown, the isolation layer 82 is deposited on the surface of the semiconductor substrate 81 by chemical vapor deposition or thermal oxidation. The material of the isolation layer 82 can be SiO 2 Or SiN, which can be 100nm to 300nm thick. Of course, the thickness of the isolation layer 82 may also be reduced or increased according to actual process conditions, which is not limited in this embodiment.
[0054] S13, deposit...
Example Embodiment
[0060] Example 3
[0061] Based on the same inventive concept, this embodiment provides a method for vertically integrating the artificial nerve synapse device provided in Embodiment 1, and the method for preparing the artificial nerve synapse device includes steps S21 to S27.
[0062] S21, providing a semiconductor substrate.
[0063] like Figure 9a As shown, the semiconductor substrate 91 may be a silicon substrate.
[0064] S22, depositing a first isolation layer on the surface of the semiconductor substrate.
[0065] like Figure 9b As shown, the first isolation layer 92 is deposited on the surface of the semiconductor substrate 91 by chemical vapor deposition or thermal oxidation. The material of the first isolation layer 92 may be SiO 2 Or SiN, which can be 100nm to 300nm thick. Of course, the thickness of the first isolation layer 92 may also be reduced or increased according to actual process conditions, which is not limited in this embodiment.
[0066] S23, de...
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