MRAM device and manufacturing method thereof

Abstract

The invention provides an MRAM device and a manufacturing method thereof. The manufacturing method comprises the steps of S1, arranging a first interconnection part and a second interconnection part in an interconnection dielectric layer; S2, sequentially arranging a first etching barrier layer and a first dielectric layer on a surface of the interconnection dielectric layer; S3, forming first metal holes in the first etching barrier layer and the first dielectric layer above a first interconnection part; S4, sequentially arranging a bottom electrode, an MTJ unit, a top electrode and a secondetching barrier layer on a surface of the first dielectric layer above the first interconnection part; S5, sequentially arranging a third dielectric layer, a third etching barrier layer and a fourth dielectric layer on a surface, far away from the first dielectric layer, of the second dielectric layer; S6, forming a second through hole and a third through hole; and S7, filling the second through hole and the third through hole with metal. The manufacturing method is advantaged in that process difficulty is reduced, and the cost rate of the device is improved.

Description

technical field [0001] The present application relates to the field of memory, and in particular, relates to an MRAM device and a manufacturing method thereof. Background technique [0002] In the prior art, an MRAM device includes a logic area and a storage area, the logic area is mainly a switching device, the storage area is mainly an MTJ device, and the MTJ device includes a bottom electrode, an MTJ unit and a top electrode. [0003] At present, the height difference between the interconnection structure above the top electrode and the interconnection structure above the logic area is relatively large. At the same time, another via hole needs to be opened in the dielectric layer of the storage area. The height difference between the two via holes is large, and the requirements for the etching selection ratio are very high. The process is difficult and the yield rate of the finished product is low. . Contents of the invention [0004] The main purpose of the present a...

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Problems solved by technology

[0004] The main purpose of the present application is to provide an MRAM device and its manufacturing method to solve the problem of the large height difference between the interconnection structure above the top electrode of the storage area of ​​the MRAM device and the interconnection structure in the logic area in the prior art, resulting in The production process is more difficult

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