Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps that: a substrate is provided; gate structures are formed on the substrate; sidewall layers extending into the substrate are formed on the side walls of the gate structures; a substrate material exposed by the sidewall layers is etched, sothat a groove can be formed; and a source-drain doping layer is formed in the groove. The semiconductor structure includes a substrate, gate structures, a groove, a source-drain doping layer and sidewall layers, wherein the gate structure is located on the substrate, the groove is positioned in the substrate between the gate structures, the source-drain doping layer is located in the groove, and the sidewall layers are located on the side walls of the gate structures; and the bottom ends of the sidewall layers extend into the source-drain doped layer. With the semiconductor structure and the forming method thereof of the invention adopted, the influence of a short channel effect on a device is reduced, and the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to adapt to the smaller feature size, the channel length of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is correspondingly shortened continuously. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate structure to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to ...

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Problems solved by technology

[0005] However, in the process of LDD and halo doping distribution to improve device performance, the source and drain doping layers are prone to void defects

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