Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor module

A technology of semiconductors and components, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as damage to installation reliability

Inactive Publication Date: 2020-01-07
TAIYO YUDEN KK
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] On the other hand, in such a semiconductor package, since the support substrate supporting the circuit components is composed of a dielectric film, there is a problem that the dielectric film is warped when mounted on an external substrate (mother board), impairing the mounting reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor module
  • Semiconductor module
  • Semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach ＞

[0060] figure 1 is a schematic perspective view of a semiconductor module 100 according to an embodiment of the present invention, figure 2 is a schematic plan view of the semiconductor module 100, image 3 Yes figure 2 A schematic sectional view of line A-A in Figure 4 Yes figure 2 The schematic cross-sectional view of the B-B line in Figure 5 It is a schematic rear view of the semiconductor package 100 . In each figure, X-axis, Y-axis and Z-axis represent three axial directions perpendicular to each other, the X-axis and Y-axis correspond to the in-plane direction of the semiconductor device 100 , and the Z-axis corresponds to the thickness direction of the semiconductor device 100 .

[0061] The semiconductor package 100 has a dielectric film 10 , a plurality of circuit components 20 , an electrode layer 30 , a frame member 40 and a sealing layer 50 .

[0062] [Dielectric film]

[0063] The dielectric film 10 is made of an electrically insulating resin material ...

no. 2 approach ＞

[0100] Figure 7 It is a schematic perspective view showing the structure of the semiconductor package 200 according to the second embodiment of the present invention. Hereinafter, configurations different from those of the first embodiment will be mainly described, and configurations that are the same as those in the first embodiment will be assigned the same reference numerals, and descriptions thereof will be omitted or simplified.

[0101] The semiconductor module 200 of this embodiment differs from the first embodiment in that it does not include the frame-shaped member 40 . That is, the first sealing resin part 51 of the present embodiment has a first part 511 covering the first mounting area a1 and a frame-shaped second part 512 defining the second mounting area a2, and the second part 512 is arranged on the second sealing resin part 511. Around the part 52.

[0102] In the semiconductor package 200 of the present embodiment, the first sealing resin portion 51 is prov...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a semiconductor module capable of suppressing warpage of a dielectric film and suppressing degradation of element characteristics. The semiconductor module according toone embodiment of the present invention includes a dielectric film, a plurality of circuit members, an electrode layer, and a sealing layer. The dielectric film has a first main surface having a firstmounting region and a second mounting region, and a second main surface on the opposite side from the first main surface. The plurality of circuit components include a first circuit component mountedin the first mounting region and a second circuit component mounted in the second mounting region. The electrode layer includes a plurality of electrode portions disposed on the second main surface and electrically connected to the plurality of circuit members. The sealing layer has a first sealing resin portion and a second sealing resin portion. The first sealing resin portion covers the firstmounting region. The second sealing resin portion is made of a resin material that is softer than the first sealing resin portion, and covers the second mounting region.

Description

technical field [0001] The present invention relates to a semiconductor module in which a circuit component is arranged on one surface of a dielectric layer and an electrode layer is arranged on the other surface. Background technique [0002] In recent years, a surface-mount integrated power module called POL (Power Over Lay) has been known (for example, refer to Patent Document 1). Typically, such a semiconductor module includes a dielectric film such as polyimide, circuit components such as power semiconductor elements and passive components mounted on one surface of the dielectric film, an electrode layer arranged on the other surface of the dielectric film, Sealing layer covering circuit parts, etc. [0003] According to the above-mentioned semiconductor module, since the circuit components are electrically connected to the electrode layer through the dielectric film, it is possible to achieve a power semiconductor module that achieves high integration of components, s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/29H01L25/16
CPCH01L23/3121H01L23/3135H01L23/293H01L25/16H01L23/3142H01L23/562H01L23/36H01L23/5386H01L2224/92144H01L2224/04105H01L24/32H01L2224/2919H01L2224/32225H01L2924/3511H01L2924/0665H01L23/564H01L23/49838H01L25/18H01L25/072H01L2924/19105H01L2924/19041H01L2924/19043H01L2924/1203H01L2924/10253H01L2924/10272H01L2924/1033H01L2924/13055H01L2924/13091H01L23/3672
Inventor 布川贵史高野贵之
Owner TAIYO YUDEN KK