Inductive coupling devices and semiconductor processing equipment
An inductive coupling and current technology, applied in the field of inductive coupling devices and semiconductor processing equipment, can solve the problems of increased difficulty in process regulation, achieve the effects of reducing damage, realizing decoupling, and improving controllability
Active Publication Date: 2022-04-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
This makes the ion energy in the etching process be affected by the combined effect of the capacitive coupling voltage generated by the bias source and the capacitive coupling voltage generated by the radio frequency coil, which greatly increases the difficulty of process control.
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[0057] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0058] As described in the background technology section, during the discharge process of the radio frequency source, in addition to the induced electromagnetic field generated by the current flowing through the radio frequency coil, there is also an electrostatic field generated by the radio frequency current on the surface of the radio frequency coil. In the power transmitted to the surface of the RF coil, the inductive coupling power accounts for about 2 / 3, and the capacitive coupling power accounts for about 1 / 3. Among them, the inductive power mainly determines the plasma density, and the capacitive power plays an ignition role in the plasma ignition proces...
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The invention discloses an inductive coupling device and semiconductor processing equipment. It includes a radio frequency power supply, a first matcher, a dielectric window, and a radio frequency coil connected to the dielectric window, the input end of the radio frequency coil is electrically connected to the radio frequency power supply via the first matcher, and the inductive coupling device is also A current guide is included; the current guide is used for directly contacting and grounding the plasma generation area of the process chamber, so as to guide the capacitive current generated by the radio frequency coil. The capacitive current generated by the radio frequency coil can be guided away by the set current guiding member, and the influence of the capacitive current generated by the radio frequency coil on the bias voltage source can be weakened or eliminated, so as to realize decoupling. In addition, damage to the wafer by high-energy ions generated by the capacitive coupling of the radio frequency coil can be reduced, and the controllability of the process performance of the inductive coupling device can also be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an inductive coupling device and a semiconductor processing device. Background technique [0002] Inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) are two commonly used plasma sources for dry etching and thin film deposition in the semiconductor field. The ICP source is excited by the high-frequency electromagnetic field generated by the high-frequency current through the radio frequency coil to generate plasma. The working pressure is low, and it has the characteristics of high plasma density and small damage to the workpiece; Plasma is generated through gas, and the working pressure is higher than that of ICP source. It has the characteristics of large area uniformity and high ion energy. [0003] The inductively coupled plasma generation system used in the etching field usually consists of two parts, one is the ICP source to control t...
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IPC IPC(8): H01J37/32
CPCH01J37/321
Inventor 李兴存王福来
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD