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Preparation method and growth structure of high-quality self-supporting nitride substrate

A nitride, self-supporting technology, applied in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve problems such as large grain boundaries of nitride films, stacking faults, and the quality of nitride crystals cannot be guaranteed, reaching High-quality self-support, increase surface free energy, and reduce the effect of defects at the interface

Inactive Publication Date: 2020-01-24
SUZHOU NANOWIN SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the defects on the surface of graphene make the nitride film finally formed by this method have a large number of defects such as grain boundaries, stacking faults, and dislocations, and the general dislocation density is greater than 1×10 9 cm -2 , the quality of nitride crystals cannot be guaranteed

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  • Preparation method and growth structure of high-quality self-supporting nitride substrate

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preparation example Construction

[0023] A method for preparing a high-quality self-supporting nitride substrate, comprising the following steps:

[0024] providing a substrate on which a polar two-dimensional material layer is formed;

[0025] A layer of graphene is formed on the two-dimensional material layer, and the graphene layer is a single-layer structure;

[0026] A thick nitride film is grown on the surface of the single-layer graphene layer;

[0027] Removing the substrate by mechanical stripping;

[0028] The two-dimensional material layer and the graphene layer are removed by grinding and polishing, and a flat nitride thick film is obtained, and the flat nitride thick film is a self-supporting nitride substrate.

[0029] Wherein, the two-dimensional material layer is a single-layer or multi-layer structure.

[0030] Wherein, the material of the two-dimensional material layer is one of boron nitride, molybdenum disulfide, tungsten disulfide or other polar two-dimensional materials.

[0031] Wher...

Embodiment

[0039] Such as figure 1 Shown, the preparation method of a kind of high-quality self-supporting nitride substrate of this embodiment comprises the following steps:

[0040] In step 1, a substrate 1 is provided, and a polar two-dimensional material layer 2 is formed on the substrate 1; in this embodiment, the two-dimensional material layer 2 is a multilayer structure; and the two-dimensional material layer 2 is nitrogen Boron layer;

[0041] Step 2, forming a graphene layer 3 on the boron nitride layer, and the graphene layer 3 is a single-layer structure;

[0042] Step 3, epitaxially growing a nitride thick film 4 on the surface of the single-layer graphene layer 3 by the HVPE process; the thickness of the nitride thick film 4 is 200 microns; in this embodiment, the nitride thick film is a nitride thick film gallium film.

[0043] Step 4, removing the substrate 1 by mechanical stripping;

[0044] Step 5: Grinding and polishing the remaining part after mechanical stripping ...

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Abstract

The invention discloses a preparation method of a high-quality self-supporting nitride substrate. The preparation method comprises the following steps that: a substrate is provided, and a polar two-dimensional material layer is formed on the substrate; a graphene layer is formed on the two-dimensional material layer, wherein the graphene layer is of a single-layer structure; a nitride thick film is grown on the surface of the single graphene layer; the substrate is removed through a mechanical stripping mode; and the two-dimensional material layer and the graphene layer are removed through a grinding and polishing treatment mode, a flat nitride thick film is obtained, and the flat nitride thick film is the self-supporting nitride substrate. With the method adopted, the nitride thick film can be grown on the surface of the defect-free graphene, defects at an interface can be effectively reduced, so that the crystal quality of the self-supporting nitride substrate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a preparation method and growth structure of a high-quality self-supporting nitride substrate. Background technique [0002] At present, when making substrates, it is generally used to directly grow nitrides on graphene, but due to the lack of dangling bonds on the surface of graphene, it is difficult to nucleate nitrides. Usually, in order to promote nitride nucleation, graphene surface defects are introduced by processes such as etching. However, the defects on the surface of graphene make the nitride film finally formed by this method have a large number of defects such as grain boundaries, stacking faults, and dislocations, and the general dislocation density is greater than 1×10 9 cm -2 , the quality of nitride crystals cannot be guaranteed. Contents of the invention [0003] In order to solve the above-mentioned technical problems, the object of the pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C23C16/34C23C16/02
CPCC23C16/0272C23C16/303H01L21/02444H01L21/02458H01L21/02485H01L21/0254H01L21/0262
Inventor 徐俞王建峰徐科
Owner SUZHOU NANOWIN SCI & TECH