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Method for developing SiGe material with low temperature using UHV/CVD

A low-temperature, growth chamber technology, applied in the field of low-temperature growth of SiGe materials using UHV/CVD, can solve problems such as difficult to achieve single atomic layer epitaxial growth, interface interdiffusion, and cold-wall UHV/CVD systems.

Inactive Publication Date: 2009-03-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] High temperature growth of SiGe / Si epitaxial materials will bring many problems, such as interdiffusion between interfaces, surface fluctuations or the formation of quantum dots
Moreover, the high-temperature growth rate is relatively large, generally several nanometers per minute, so it is difficult to achieve epitaxial growth of a single atomic layer.
If you grow materials like SiGe / Si quantum cascade structures, it is difficult to achieve with ordinary cold-wall UHV / CVD systems

Method used

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  • Method for developing SiGe material with low temperature using UHV/CVD
  • Method for developing SiGe material with low temperature using UHV/CVD
  • Method for developing SiGe material with low temperature using UHV/CVD

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Embodiment

[0039] Using the above method, an ultra-high vacuum chemical deposition system was used to grow SiGe materials at a substrate temperature of 495°C, 475°C, and 455°C. Combined reference figure 1 , The growth steps are as follows:

[0040] Step 1: Clean the substrate. In this example, a Si substrate is used (step S10);

[0041] Step 2: Degas the substrate at high temperature for 12 hours. In this example, the degassing temperature is 400°C. After experimental verification, the degassing temperature should reach 400°C. When the degassing temperature is over 400°C, the degassing effect is similar to that of 400°C, which can meet the material growth requirements (step S20).

[0042] Step 3: Pass the substrate into the growth chamber, the background vacuum of the growth chamber is 5×10 -8 Pa (step S30).

[0043] Step 4: Deoxidize the substrate introduced into the growth chamber at high temperature. The temperature rise process is slow, and the vacuum of the growth chamber is maintained...

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Abstract

The invention relates to a method which uses UHV / CVD for growing SiGe material on a substrate at a low temperature. The method is characterized in that the steps for growing material are provided: step 1: taking one substrate and then cleaning; step 2: degassing the cleaned substrate at a high temperature; step 3: transferring the substrate to a growth room; step 4: heating the substrate till deoxidization; step 5: lowering the temperature of the substrate; and step 6: inputting source gas and impurity gas to the growth room, and growing material on the substrate.

Description

Technical field [0001] The invention belongs to the technical field of chemical vapor deposition of semiconductor crystal materials, in particular to a method for low-temperature growth of SiGe materials by UHV / CVD. Background technique [0002] With the development of microelectronics and silicon-based optoelectronics technology, epitaxial Si and SiGe on SOI or Si substrates have become research hotspots and technologies that must be overcome. The current equipment for growing SiGe materials includes solid source molecular beam epitaxy system (SSMBE), gas source molecular beam epitaxy system (GSMBE), ultra-high vacuum chemical vapor deposition system (UHV / CVD) and so on. [0003] The SSMBE system can achieve low-temperature growth of SiGe materials, and the growth temperature can reach 200°C or even lower. However, the SSMBE equipment needs to replace the solid source regularly, which causes the growth chamber to be exposed to the atmosphere, and the equipment needs to be baked ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C30B25/02C30B28/14
Inventor 韩根全曾玉刚余金中
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI